Characterization of wide bandgap power semiconductor devices

This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semicondu...

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Bibliographic Details
Main Authors: Wang, Fei (Author), Zhang, Zheyu, (Author), Jones, Edward A., (Author)
Format: eBook
Language: English
Published: Stevenage, United Kingdom : Institution of Engineering and Technology, 2018.
Series: IET energy engineering series ; 128.
Subjects:
Wide gap semiconductors.
Power semiconductors.
Electric capacity.
elektronické knihy
electronic books
ISBN: 9781785614927
1785614924
9781523119349
1523119349
9781785614910
1785614916
Physical Description: 1 online resource (ix, 333 pages) : illustrations

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Summary: This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.
Bibliography: Includes bibliographical references and index.
ISBN: 9781785614927
1785614924
9781523119349
1523119349
9781785614910
1785614916
Access: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty

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