Silicon carbide and related materials 2017 : selected peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA

• Corporate Author: International Conference on Silicon Carbide and Related Materials Washington, D.C.)
• Other Authors: Stahlbush, Robert, (Editor)
• Format: eBook
• Language: English
• Published: Zurich, Switzerland : Trans Tech Publications, Limited, 2018.
• Series: Materials science forum ; v. 924.
• Subjects: Silicon carbide > Congresses.; Silicon carbide > Electric properties > Congresses.; Silicon-carbide thin films > Congresses.; Nitrides > Congresses.; Graphene > Congresses.; Crystal growth > Congresses.; Wide gap semiconductors > Materials > Congresses.; Wide gap semiconductors > Materials > Technological innovations > Congresses.; elektronické knihy; electronic books
• ISBN: 9781523122844; 1523122846; 9783035731453; 3035731454
• Physical Description: 1 online resource (1014 pages) : illustrations
• Item Description: Chapter 2: Defects, Material Studies and Characterization.
• Access: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty

This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science.