Space microelectronics. Volume 2, Integrated circuit design for space applications /
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| Main Authors | , , |
|---|---|
| Format | Electronic eBook |
| Language | English |
| Published |
Norwood :
Artech House,
2017.
|
| Series | Artech House space technology and applications library.
|
| Subjects | |
| Online Access | Full text |
| ISBN | 9781630814694 1630814695 9781630812591 1630812595 |
| Physical Description | 1 online resource : illustrations |
Cover
Table of Contents:
- Intro; Space Microelectronics Volume 2: Integrated Circuit Design for Space Applications; Introduction; Preface; Chapter 1 Considerations for Selection and Application of Foreign Electronic Component Bases in Designing Domestic Spacecraft; 1.1 General Problems of ECB Selection for REE of Space Application; 1.2 Restriction on Export of Foreign-Made Electronic Components to Russia; 1.2.1 Restriction of ECB Exports from the United States; 1.2.2 Restriction on ECB Exports from Europe and Other Countries; 1.2.3 International Export Control Organizations
- 1.3 Peculiarities of Application of Foreign-Made Industrial ECB in Rocket and Space Technology1.4 Counterfeit Microelectronic Products and Methods of Their Detection; 1.4.1 Types of Counterfeit Components; 1.4.2 Effective Methods of Detecting Counterfeit Products; 1.4.3 Electric Testing of Microelectronic Products for Space Application; 1.5 Peculiarities of Selection and Application of Foreign Processors in Domestic Spacecraft; 1.5.1 Application Aspects of Foreign Processors in Domestic Spacecraft; 1.5.2 Versions and Qualifications of UT 699 and GR 712 Microprocessors
- 1.5.3 Architecture and Hardware Features of UT 699 and GR 712 Microprocessors of Leon 3FT Family1.5.4 Peculiarities of Microprocessor Leon 3 Programming; 1.6 Radiation-Tolerant DC Converters for Space and Military Applications; 1.6.1 Total Ionizing Dose (TID); 1.6.2 Enhanced Low-Dose Rate Sensitivity (ELDRS); 1.6.3 Single Event Effects (SEE); 1.6.4 Analysis of Parameter Limits in Worst-Case Scenarios; 1.6.5 MIL-PRF-38534 Standard Class K Requirements; 1.6.6 Absence of Optocouplers in Hybrid DC-DC Converters
- 1.7 Best Practices of Work Arrangement for Producing Electronic Components of Space System On-Board Equipment1.8 Accelerated Reliability Testing of ECB SA; 1.9 Analysis of Test Results for Microcircuits Purchased in Russia Between 2009 and 2011; References; Chapter 2 Peculiarities of the Technological Process of Production and Basic Constructions of Submicron Transistors and Schottky Diodes; 2.1 On the Terminology of Submicron Microelectronics; 2.2 Tendencies and Perspectives of Modern Technology Development in Microelectronics; 2.2.1 Scaling Problem
- 2.2.2 Modern Submicron Technology: An Example of Its Implementation for Microprocessor Production2.3 Peculiarities of Submicron MOS Transistors; 2.3.1 MOS Transistors Structures in VLSIC; 2.3.2 Methods to Improve MOS Transistor Properties; 2.3.3 MOS Transistors with the Structure Silicon on Insulator; 2.3.4 Transistors with Double, Triple, and Cylindrical Gates; 2.3.5 Other Types of Transistor Structures; 2.3.6 The Peculiarities of Transistors for Analog Applications; 2.4 Constructional-Technological Peculiarities of High-Temperature Schottky Diodes