High mobility materials for CMOS applications

High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's...

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Bibliographic Details
Other Authors: Collaert, Nadine, (Editor)
Format: eBook
Language: English
Published: Cambridge, MA : Woodhead Publishing, [2018]
Series: Woodhead Publishing series in electronic and optical materials.
Subjects:
Metal oxide semiconductors, Complementary.
elektronické knihy
electronic books
ISBN: 9780081020623
0081020627
9780081020616
0081020619
Physical Description: 1 online resource

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Table of contents

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020 |a 0081020627  |q (electronic bk.) 
020 |z 9780081020616 
020 |z 0081020619 
035 |a (OCoLC)1041139751  |z (OCoLC)1041901970  |z (OCoLC)1042396060  |z (OCoLC)1105178503  |z (OCoLC)1105561052  |z (OCoLC)1229756858 
245 0 0 |a High mobility materials for CMOS applications /  |c edited by Nadine Collaert. 
264 1 |a Cambridge, MA :  |b Woodhead Publishing,  |c [2018] 
264 4 |c ©2018 
300 |a 1 online resource 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Woodhead Publishing series in electronic and optical materials 
504 |a Includes bibliographical references and index. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Metal oxide semiconductors, Complementary. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Collaert, Nadine,  |e editor. 
776 0 8 |i Print version:  |z 0081020619  |z 9780081020616  |w (OCoLC)1011515281 
830 0 |a Woodhead Publishing series in electronic and optical materials. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpHMMCMOS2/high-mobility-materials?kpromoter=marc  |y Full text 

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