Vertical GaN and SiC power devices

"This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of vari...

Full description

Saved in:
Bibliographic Details
Main Author Mochizuki, Kazuhiro (Author)
Format Electronic eBook
LanguageEnglish
Published Boston ; London : Artech House, [2018]
SeriesArtech House microwave library.
Subjects
Microwave devices.
Power electronics.
Gallium nitride > Electric properties.
Silicon carbide > Electric properties.
elektronické knihy
electronic books
Online AccessFull text
ISBN9781630814298
1630814296
9781630814274
163081427X
Physical Description1 online resource (263 pages) : illustrations

Cover

Table of Contents:
  • 1. Vertical versus lateral power semiconductor devices
  • 2. Physical properties of GaN and SiC
  • 3. p-n junctions
  • 4. Effects of photon recycling
  • 5. Bulk crystal growth
  • 6. Epitaxial growth
  • 7. Fabrication processes
  • 8. Metal-semiconductor contacts and unipolar power diodes
  • 9. Metal-insulator-semiconductor capacitors and unipolar power-switching devices
  • 10. Bipolar power diodes and power-switching devices
  • 11. Edge terminations
  • 12. Reliability of vertical GaN and SiC power devices.

Similar Items