Vertical GaN and SiC power devices

"This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of vari...

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Bibliographic Details
Main Author: Mochizuki, Kazuhiro, (Author)
Format: eBook
Language: English
Published: Boston ; London : Artech House, [2018]
Series: Artech House microwave library.
Subjects:
Microwave devices.
Power electronics.
Gallium nitride > Electric properties.
Silicon carbide > Electric properties.
elektronické knihy
electronic books
ISBN: 9781630814298
1630814296
9781630814274
163081427X
Physical Description: 1 online resource (263 pages) : illustrations

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Table of contents

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001 kn-on1039940704
003 OCoLC
005 20240717213016.0
006 m o d
007 cr cn|||||||||
008 180614t20182018maua ob 001 0 eng d
040 |a YDX  |b eng  |e rda  |e pn  |c YDX  |d OCLCO  |d N$T  |d EBLCP  |d WAU  |d OCLCF  |d STF  |d CUV  |d OCLCQ  |d UKAHL  |d OCLCQ  |d K6U  |d IEEEE  |d OCLCQ  |d OCLCO  |d UPM  |d OCLCQ  |d OCLCO  |d OCLCL  |d SXB  |d OCLCO 
020 |a 9781630814298  |q (electronic book) 
020 |a 1630814296  |q (electronic book) 
020 |z 9781630814274  |q (cloth) 
020 |z 163081427X  |q (cloth) 
035 |a (OCoLC)1039940704 
100 1 |a Mochizuki, Kazuhiro,  |e author. 
245 1 0 |a Vertical GaN and SiC power devices /  |c Kazuhiro Mochizuki. 
264 1 |a Boston ;  |a London :  |b Artech House,  |c [2018] 
264 4 |c ©2018 
300 |a 1 online resource (263 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Artech House microwave series 
504 |a Includes bibliographical references and index. 
505 0 |a 1. Vertical versus lateral power semiconductor devices -- 2. Physical properties of GaN and SiC -- 3. p-n junctions -- 4. Effects of photon recycling -- 5. Bulk crystal growth -- 6. Epitaxial growth -- 7. Fabrication processes -- 8. Metal-semiconductor contacts and unipolar power diodes -- 9. Metal-insulator-semiconductor capacitors and unipolar power-switching devices -- 10. Bipolar power diodes and power-switching devices -- 11. Edge terminations -- 12. Reliability of vertical GaN and SiC power devices. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a "This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource."--  |c Provided by publisher 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Microwave devices. 
650 0 |a Power electronics. 
650 0 |a Gallium nitride  |x Electric properties. 
650 0 |a Silicon carbide  |x Electric properties. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
776 0 8 |i Print version:  |a Mochizuki, Kazuhiro.  |t Vertical GaN and SiC power devices.  |d Boston : Artech House, [2018]  |z 163081427X  |w (DLC) 2018285985  |w (OCoLC)1019641182 
830 0 |a Artech House microwave library. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpVGNSCPD1/vertical-gan-and?kpromoter=marc  |y Full text 

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