Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method.
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| Main Author | |
|---|---|
| Other Authors | |
| Format | Electronic eBook |
| Language | English |
| Published |
Gelugor :
Penerbit USM,
2017.
|
| Subjects | |
| Online Access | Full text |
| ISBN | 9789674611231 9674611231 |
| Physical Description | 1 online resource (65 pages) |
Cover
| LEADER | 00000cam a2200000Mu 4500 | ||
|---|---|---|---|
| 001 | kn-on1031337703 | ||
| 003 | OCoLC | ||
| 005 | 20240717213016.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 180414s2017 xx o 000 0 eng d | ||
| 040 | |a EBLCP |b eng |e pn |c EBLCP |d OCLCQ |d MERUC |d OCLCQ |d LOA |d OCLCO |d OCLCF |d OCLCQ |d OCLCO |d OCLCL |d SXB |d OCLCQ | ||
| 020 | |a 9789674611231 | ||
| 020 | |a 9674611231 | ||
| 035 | |a (OCoLC)1031337703 |z (OCoLC)1264836322 | ||
| 100 | 1 | |a Cheah, Sook Fong. | |
| 245 | 1 | 0 | |a Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method. |
| 260 | |a Gelugor : |b Penerbit USM, |c 2017. | ||
| 300 | |a 1 online resource (65 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 505 | 0 | |a Cover; Half Title Page; Title Page; Copyright Page; Contents; List of Tables; List of Figures; List of Symbols; Preface; List of Abbreviations; 1 Introduction; 2 Overview of the Fabrication of Porous GaN via Wet Etching Method; 2.1 Chemical etching; 2.2 Anodic etching; 2.3 Metal-assisted electroless etching; 2.4 UV-assisted photoelectrochemical etching; 3 Attenuated Total Reflection Study of Porous Semiconductor; 4 Methodology; 4.1 Sample preparation; 4.2 Experimental set-up for electrochemical etching approach; 4.3 Characterizations; 4.3.1 FESEM measurement. | |
| 505 | 8 | |a 4.3.2 Polarized IR-ATR Measurement4.3.3 PL measurement; 4.3.4 ATR curve fitting; 5 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous UID GaN Thin Films; 5.1 FESEM analysis; 5.2 p-polarized ATR study; 5.3 PL analysis; 6 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 6.1 FESEM analysis; 6.2 p-polarized ATR study; 6.3 PL analysis; 7 The Influences of Etching Durations on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 7.1 FESEM analysis. | |
| 505 | 8 | |a 7.2 p-polarized ATR study8 Conclusion; Appendix; References; Index; Back Cover. | |
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
| 590 | |a Knovel |b Knovel (All titles) | ||
| 650 | 0 | |a Silicon carbide. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 700 | 1 | |a Ng, Sha Shiong. | |
| 776 | 0 | 8 | |i Print version: |a Cheah, Sook Fong. |t Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method. |d Gelugor : Penerbit USM, ©2017 |z 9789674611385 |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpFPGNPEM8/fabrication-of-porous?kpromoter=marc |y Full text |