rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Handbook of thin film deposition
  name:
    name part: Seshan, Krishna
    role:
      role term: editor.
  name:
    name part: Schepis, Dominic
    role:
      role term: editor.
  type of resource: text
  genre: bibliography
  genre: elektronické knihy
  genre: electronic books
  origin info:
    place:
      place term: enk
    date issued: 2018
    edition: Fourth edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource
  abstract: Handbook of thin film deposition, Fourth edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes. Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries.
  table of contents: Front Cover; Handbook of Thin Film Deposition; Copyright Page; Dedication; Contents; List of Contributors; Biographies; Preface; I. Scaling; 1 A Perspective on Today's Scaling Challenges and Possible Future Directions; 1.1 Introduction; 1.2 Review and Update of Generalized Scaling; 1.3 Energy/Performance Considerations; 1.4 Design Issues with Back-Gated Thin SOI CMOS; 1.5 Carrier Confinement and Quantization Effects; 1.6 Potential of Low-Temperature Operation; 1.7 Conclusion; Acknowledgments; References; 2 Limits and Hurdles to Continued CMOS Scaling; 2.1 Terminology; 2.2 Costs.
  table of contents: 2.3 ITRS Roadmap-based Issues; 2.4 Issues in Device Scaling; 2.5 Scaling Basics and Results; 2.5.1 Contact Spacing and SRAM Size; 2.6 Lithography; 2.6.1 Resolution; 2.7 Litho Wavelength Evolution; 2.7.1 CMOS Scaling and Various Leakages; 2.7.2 Ioff Leakage, Tunneling Current, Source-Drain Leakage; 2.7.3 Increase of ON-current; 2.7.4 Leakage Currents and the Limits Imposed by Them; 2.7.5 Gate Overlap Capacitance; 2.7.6 Subthreshold Leakage; 2.7.7 Hot-e Leakage; 2.8 Limits created by a falling Vt and Vcc; 2.9 Scaling Limits and Device Limitations--Roadmap Based; 2.9.1 Scaling of Memory: GIDL.
  table of contents: 2.9.2 New Device Features and New Materials; 2.9.3 Use of Si-Ge and strained layers to enhance mobility: is this scalable?; 2.9.4 New Materials: Graphene; 2.10 Back-End Scaling Issues; 2.10.1 Back-End Scaling: Contact Pitch; 2.10.2 SRAM Cell Size; 2.10.3 Metal Layers: Metal/Dielectric Scaling/the Need for New Materials; 2.10.4 Thermal Conductivity Limits: Cooling Issues; 2.10.5 Low-temperature Liquid Nitrogen Cooled Computers; 2.10.6 Thermodynamic Considerations: Noise; 2.11 Fluctation in Dopant Distribution: Effect on Vt Thermodynamic issues.
  table of contents: 2.11.1 Thermal Fluctuations, Thermodynamics of Computations: the Work of Bennett, Keyes, and Feynman; 2.11.2 Heat Production and Chip Cooling; 2.12 Considerations in Heat Production; 2.13 Conclusions; References; Classic Papers; Cost of Fabricators; ITRS Roadmap Publications; Lithography; Device Scaling Limits; Metal Gates; FINFETS; NanoWires; Leakage Currents in Transistors; Gate Leakage; Leakages as a Limiter in Scaling; References to Graphene; Heat Production; Also see chapter 4 on Thermal Limits; This Handbook; Limits of Computing; Low-temperature Electronics; Further Reading.
  table of contents: 3 Reliability Issues: Reliability Imposed Limits to Scaling; 3.1 Introduction and History; 3.1.1 History of Reliability; 3.1.2 New and Traditional Views of Reliability; 3.1.3 Concerns of Reliability; 3.1.4 Display of Reliability Data; 3.2 Reliability Testing Procedures; 3.3 Front-End Reliability Issues Impacting Scaling and Various Leakages; 3.4 Back-end Reliability; 3.4.1 Thermally Activated Failures; Arrhenius Equation and Electromigration; 3.4.2 Electromigration and Black's equation; 3.4.3 Physically based models of electromigration: From Black's equation to modern TCAD models.
  note: edited by Krishna Seshan, Dominic Schepis.
  note: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  note: Includes bibliographical references and index.
  subject:
    topic: Thin films
    genre: Handbooks, manuals, etc
  subject:
    topic: Thin film devices
    topic: Design and construction
  related item:
    title info:
      title: Handbook of thin film deposition
    origin info:
      publisher: Oxford, United Kingdom ; Cambridge, MA, United States : William Andrew, an imprint of Elsevier, [2018]
      edition: Fourth edition.
    identifier: (OCoLC)991746709
  identifier: 9780128123126
  identifier: 0128123125
  identifier: 9780128123119
  identifier: 0128123117
  identifier: https://proxy.k.utb.cz/login
  access condition: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  record info:
    record content source: N$T
    record creation date: 180228
    record change date: 20240717213016.0
    record identifier: kn-on1025340925
    language of cataloging:
      language term: eng