High Frequency MOSFET Gate Drivers.

This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a...

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Bibliographic Details
Main Author: Zhang, ZhiLiang.
Format: eBook
Language: English
Published: Stevenage : The Institution of Engineering and Technology, 2017.
Series: Materials, Circuits and Devices
Subjects:
Switching power supplies.
Metal oxide semiconductor field-effect transistors.
elektronické knihy
electronic books
ISBN: 1785613669
9781785613661
9781523112845
1523112840
1785613650
9781785613654
Physical Description: 1 online resource (337 pages)

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Table of contents

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003 OCoLC
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006 m o d
007 cr cn|||||||||
008 171027s2017 xx o 000 0 eng d
040 |a IDEBK  |b eng  |e pn  |c IDEBK  |d OCLCQ  |d YDX  |d KNOVL  |d OCLCF  |d STF  |d MERER  |d OCLCQ  |d ZCU  |d OCLCQ  |d OCLCO  |d OCLCQ  |d ESU  |d OCLCO  |d SXB 
020 |a 1785613669  |q (ebk) 
020 |a 9781785613661 
020 |a 9781523112845 
020 |a 1523112840 
020 |z 1785613650 
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035 |a (OCoLC)1007839541  |z (OCoLC)1007081249 
100 1 |a Zhang, ZhiLiang. 
245 1 0 |a High Frequency MOSFET Gate Drivers. 
260 |a Stevenage :  |b The Institution of Engineering and Technology,  |c 2017. 
300 |a 1 online resource (337 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 0 |a Materials, Circuits and Devices 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Switching power supplies. 
650 0 |a Metal oxide semiconductor field-effect transistors. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
776 0 8 |i Print version:  |z 1785613650  |z 9781785613654  |w (OCoLC)999549770 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpHFMOSFE2/high-frequency-mosfet?kpromoter=marc  |y Full text 

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