Power Electronics Handbook.

Power Electronics Handbook, Fourth Edition, brings together over 100 years of combined experience in the specialist areas of power engineering to offer a fully revised and updated expert guide to total power solutions. Designed to provide the best technical and most commercially viable solutions ava...

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Bibliographic Details
Main Author: Rashid, Muhammad H.
Format: eBook
Language: English
Published: Saint Louis : Elsevier Science, 2017.
Edition: 4th ed.
Subjects:
ISBN: 9780128114087
0128114088
9780128114070
012811407X
Physical Description: 1 online resource (1510 pages)

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Table of contents

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100 1 |a Rashid, Muhammad H. 
245 1 0 |a Power Electronics Handbook. 
250 |a 4th ed. 
264 1 |a Saint Louis :  |b Elsevier Science,  |c 2017. 
300 |a 1 online resource (1510 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
505 0 |a Front Cover; Power Electronics Handbook; Copyright; Table of Contents; Contributors; Chapter 1: Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.2.1. The Efficiency Objective-The Switch; 1.2.2. The Reliability Objective-Simplicity and Integration; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.4.1. Single-Switch Circuits; 1.4.2. The Method of Energy Balance; 1.5. Tools for Analysis and Design; 1.5.1. The Switch Matrix; 1.5.2. Implications of Kirchhoff's Voltage and Current Laws; 1.5.3. Resolving the Hardware Problem-Semiconductor Devices. 
505 8 |a 1.5.4. Resolving the Software Problem-Switching Functions1.5.5. Resolving the Interface Problem-Lossless Filter Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronic Devices; Chapter 2: Semiconductor Diodes and Transistors; 2.1. Semiconductor Diode; 2.1.1. Static Characteristics; 2.1.2. Dynamic Characteristics; 2.1.3. Common Types of Diodes; 2.1.4. Evaluating the Dynamic Characteristics of Real Diodes; 2.1.5. Series and Parallel Connection of Power Diodes; 2.1.6. Typical Application of Diodes; 2.1.6.1. Rectifiers; 2.1.6.2. Freewheeling. 
505 8 |a 2.1.6.3. Voltage Multiplier2.1.7. PSPICE Model; 2.2. Power Bipolar Transistor; 2.2.1. Basic Structure and Operation; 2.2.2. Static Characteristics; 2.2.3. Safe Operation Area; 2.2.4. Switching Characteristics; 2.2.5. Transistor Base Driver Circuits; 2.2.6. BJT Applications; 2.2.7. PSPICE Model; 2.3. Power MOSFET; 2.3.1. Basic Structure; 2.3.2. Static Characteristics; 2.3.2.1. Ohmic Region; 2.3.2.2. Cut-off Region; 2.3.2.3. Active Region; 2.3.3. Switching Characteristics; 2.3.3.1. Turn-on Analysis; 2.3.3.2. Turn-off Analysis; 2.3.4. Safe Operation Area; 2.3.5. MOSFET Applications. 
505 8 |a 2.3.6. PSPICE Model2.4. Insulated Gate Bipolar Transistor; 2.4.1. Basic Structure; 2.4.2. Static Characteristics; 2.4.3. Switching Characteristics; 2.4.3.1. Turn-on Analysis; 2.4.3.2. Turn-off Analysis; 2.4.4. IGBT Applications; 2.4.5. PSPICE Model; 2.5. Swtiching evaluation of a Real MOSFET; 2.5.1. Results for Sw1 ON and Sw2 OFF and Rpot at the Maximum Resistance; 2.5.2. Results for Sw1 ON and Sw2 OFF and Rpot at the Minimum Resistance; 2.5.3. Results for Sw1 and Sw2 ON and Rpot at the Maximum Resistance; 2.5.4. Results for Sw1 and Sw2 OFF and Rpot at the Maximum Resistance. 
505 8 |a 2.6. Heatsink Thermal Design for Power Semiconductors2.6.1. Heatsink Design; 2.7. Transistor Selection Criteria; References; Chapter 3: Thyristors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.3.1. Current-Voltage Curves for Thyristors; 3.3.2. Edge and Surface Terminations; 3.3.3. Packaging; 3.4. Dynamic Switching Characteristics; 3.4.1. Cathode Shorts; 3.4.2. Anode Shorts; 3.4.3. Amplifying Gate; 3.4.4. Temperature Dependencies; 3.5. Thyristor Parameters; 3.6. Types of Thyristors; 3.6.1. SCRs and GTOs; 3.6.1.1. On-State Characteristics. 
500 |a 3.6.1.2. Off-State Characteristics. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a Power Electronics Handbook, Fourth Edition, brings together over 100 years of combined experience in the specialist areas of power engineering to offer a fully revised and updated expert guide to total power solutions. Designed to provide the best technical and most commercially viable solutions available, this handbook undertakes any or all aspects of a project requiring specialist design, installation, commissioning and maintenance services. Comprising a complete revision throughout and enhanced chapters on semiconductor diodes and transistors and thyristors, this volume includes renewable resource content useful for the new generation of engineering professionals. This market leading reference has new chapters covering electric traction theory and motors and wide band gap (WBG) materials and devices. With this book in hand, engineers will be able to execute design, analysis and evaluation of assigned projects using sound engineering principles and adhering to the business policies and product/program requirements. 
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650 0 |a Power electronics  |v Encyclopedias. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
776 0 8 |i Print version:  |a Rashid, Muhammad H.  |t Power Electronics Handbook.  |d Saint Louis : Elsevier Science, ©2017  |z 9780128114070 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpPEHE000C/power-electronics-handbook?kpromoter=marc  |y Full text