http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Mcevoy's Handbook of Photovoltaics, Third Edition, is a benchmark publication for those involved in the design, manufacture and use of these devices. This fully revised handbook includes brand new sections on smart grids, net metering and the modeling of photovoltaic systems, as well as fully revised content on developments in photovoltaic applications, the economics of PV manufacturing and updated chapters on solar cell function, raw materials, photovoltaic standards, calibration and testing, all with new examples and case studies.
Front Cover -- McEvoy's Handbook of Photovoltaics -- Copyright Page -- Dedication -- Contents -- List of Contributors -- Biography -- Preface to the Third Edition -- Preface to the Second Edition -- Preface to the First Edition -- I-1 Solar Cells -- I-1-A Principles of Solar Cell Operation -- 1 Introduction -- 2 Electrical Characteristics -- 2.1 The ideal solar cell -- 2.2 Solar cell characteristics in practice -- 2.3 The quantum efficiency and spectral response -- 3 Optical Properties -- 3.1 The antireflection coating -- 3.2 Light trapping -- 4 Typical Solar Cell Structures -- 4.1 The p-n junction solar cell -- 4.1.1 The p-n junction -- 4.1.2 Uniform emitter and base -- 4.1.3 Diffused emitter -- 4.2 Heterojunction cells -- 4.3 The p-i-n structure -- 4.4 Series resistance -- References -- I-1-B Semiconductor Materials and Modeling -- 1 Introduction -- 2 Semiconductor Band Structure -- 3 Carrier Statistics in Semiconductors -- 4 The Transport Equations -- 5 Carrier Mobility -- 6 Carrier Generation by Optical Absorption -- 6.1 Band-to-band transitions -- 6.2 Free-carrier absorption -- 7 Recombination -- 7.1 Bulk recombination processes -- 7.2 Surface recombination -- 7.3 Minority-carrier lifetime -- 8 Radiation Damage -- 9 Heavy Doping Effects -- 10 Properties of Hydrogenated Amorphous Silicon -- Acknowledgments -- References -- Further Reading -- I-1-C Ideal Efficiencies -- 1 Introduction -- 2 Thermodynamic Efficiencies -- 3 Efficiencies in Terms of Energies -- 4 Efficiencies Using the Shockley Solar Cell Equation -- 5 General Comments on Efficiencies -- References -- I-2 Crystalline Silicon Solar Cells -- I-2-A Crystalline Silicon: Manufacture and Properties -- 1 Introduction -- 2 Characteristics of Silicon Wafers for Use in Photovoltaic Manufacturing -- 2.1 Geometrical specifications -- 2.2 Physical specifications -- 2.3 Physical specifications.
3 Feedstock Silicon -- 4 Crystal Preparation Methods -- 4.1 Czochrahki silicon -- 4.2 Multicrystalline silicon -- 4.2.1 Charge preparation -- 4.2.2 Crucibles -- 4.3 Electromagnetic continuous casting -- 4.4 Float-zone silicon -- 4.5 Nonwafer technologies -- 5 Shaping and Wafering -- 5.1 Shaping -- 5.2 Wafering -- References -- I-2-B High-Efficiency Silicon Solar Cell Concepts -- 1 Introduction -- 2 High-Efficiency Laboratory Cells -- 2.1 Silicon space cell development -- 2.2 High-efficiency terrestrial cells -- 2.3 Rear passivated cells -- 2.4 PERC design features -- 2.5 Heterojunction cells -- 3 Commercial Al-BSF Screen-Printed Cells -- 3.1 Structure -- 3.2 Typical Al-BSF cell performance -- 3.3 Improved screen-printing technology -- 3.3.1 Improved pastes -- 3.3.2 Selective emitter and multiple printing -- 3.3.3 Hot-melt and stencil printing -- 3.3.4 Plated seed layers -- 3.4 Ag supply limitations -- 4 Commercial Laser-Processed Cells -- 4.1 Buried-contact cells -- 4.2 Semiconductor finger solar cell -- 4.3 Laser-doped, selective-emitter solar cells -- 5 Commercial Heterojunction Cells -- 6 Commercial Rear-Contacted Cells -- 6.1 Rear-junction IBC solar cells -- 6.2 Emitter wrap-through cells -- 6.3 Metal wrap-through cells -- 7 Bifacial Cells -- 8 Commercial Shift to High Efficiency -- 9 Conclusions -- Acknowledgments -- References -- I-2-C Low-Cost Industrial Technologies for Crystalline Silicon Solar Cells -- 1 Introduction -- 2 Cell Processing -- 2.1 Substrates -- 2.2 Etching, texturing, and optical confinement -- 2.3 Cleaning -- 2.4 Junction formation -- 2.5 Front surface passivation and antireflection coating -- 2.6 Back surface field and back side passivation -- 2.7 Front contact formation -- 2.8 Substrate material improvement -- 2.8.1 Gettering by phosphorus diffusion -- 2.8.2 Gettering by Aluminum Treatment.
2.9 "Fast processing" techniques -- 3 Industrial Solar Cell Technologies -- 3.1 Screen-printing solar cells -- 3.2 Buried contact solar cells -- 3.3 Metal-insulator-semiconductor inversion layer solar cells -- 3.4 Solar cells on edge-defined-film-fed growth silicon sheets -- 3.5 Commercial thin-film crystalline silicon solar cells -- 4 Cost of Commercial Photovoltaic Modules -- References -- Further Reading -- I-2-D Thin Crystalline and Polycrystalline Silicon Solar Cells -- 1 Introduction and Overview -- 2 Previous Reviews -- 3 Perspective -- 4 Solar Cells Made by Wafer Thinning -- 5 Silicon Layer Transfer -- 6 Solar Cells Made in Silicon Films Deposited on Low-Cost Substrates -- 7 Features for Optical Enhancement of Thin-Film Crystalline Silicon Solar Cells -- 8 Conclusion and Outlook -- References -- Thin-Film Silicon Solar Cell Bibliography -- I-3 Thin Film Technologies -- I-3-A Thin-Film Silicon Solar Cells -- 1 Introduction -- 1.1 Tandem and multijunction solar cells -- 2 Hydrogenated Amorphous Silicon (a-Si:H) Layers -- 2.1 Structure of amorphous silicon -- 2.2 Gap states in amorphous silicon: mobility gap and optical gap -- 2.3 Conductivity and doping of amorphous silicon -- 2.3.1 Conductivities -- 2.3.2 Doping -- 3 Hydrogenated Microcrystalline Silicon (µc-Si:H) Layers -- 3.1 Structure of microcrystalline silicon -- 3.2 Optical absorption, gap states, and defects in microcrystalline silicon -- 3.3 Conductivities, doping, impurities, and aging in microcrystalline silicon -- 3.3.1 Conductivities -- 3.3.2 Doping -- 3.3.3 Impurities -- 3.3.4 Aging -- 4 Functioning of Thin-Film Silicon Solar Cells with p-i-n and n-i-p Structures -- 4.1 Role of the internal electric field -- 4.1.1 Formation of the internal electric field in the i layer -- 4.1.2 Reduction and deformation of the internal electric field in the i layer.
4.2 Recombination and collection -- 4.3 Shunts -- 4.4 Series resistance problems -- 4.5 Light trapping -- 5 Tandem and Multijunction Solar Cells -- 5.1 General principles -- 5.2 a-Si:H/a-Si:H tandems -- 5.3 Triple-junction amorphous cells with silicon-germanium alloys -- 5.4 Microcrystalline-amorphous or "Micromorph" tandems -- 6 Module Production and Performance -- 6.1 Deposition of the thin-film silicon layers -- 6.2 Substrate materials and transparent contacts -- 6.3 Laser scribing and cell interconnection -- 6.4 Module encapsulation -- 6.5 Module performance -- 6.6 Field experience -- 7 Conclusions -- References -- I-3-B CdTe Solar Cells -- 1 Introduction -- 2 Material Properties of CdTe -- 3 The CdTe/CdS Solar Cell in Superstrate Configuration -- 4 Different Methods of CdTe Film Deposition -- 4.1 Vacuum evaporation -- 4.2 Atomic layer epitaxy -- 4.3 Electrodeposition -- 4.4 Screen printing -- 4.5 Metal-organic chemical vapor deposition -- 4.6 Sputtering -- 4.7 Close-spaced sublimation -- 4.8 Vapor transport deposition -- 5 Transparent Conductive Oxide -- 6 Buffer Layer -- 6.1 Chemical bath deposition -- 6.2 Close-spaced sublimation -- 6.3 Sputtering -- 6.4 Vacuum evaporation -- 7 Back Contact -- 8 The Copper Issue -- 9 The Activation Treatment of CdTe -- 9.1 Activation methods -- 9.1.1 CdCl2 treatment -- 9.1.2 Chlorine containing gases -- 9.1.3 MgCl2 treatment -- 10 The Doping Issue -- 11 The Band Grading -- 12 Characterization Methods -- 12.1 Characterization of physical properties -- 12.2 Characterization of electrical properties -- 13 Substrate Configuration CdTe Solar Cells -- 14 Flexible CdTe Cells -- 14.1 Superstrate configuration -- 14.2 Substrate configuration -- 15 Ultra-thin CdTe Cells -- 16 Industrial Module Production -- 16.1 CdTe deposition -- 16.2 CdCl2 deposition -- 16.3 Front contact deposition -- 16.4 Laser scribing.
16.5 Back contact -- 17 The Environmental Issue -- 18 Conclusions -- References -- I-3-C Cu(In,Ga)Se2 Thin-Film Solar Cells -- 1 Introduction -- 2 Material Properties -- 2.1 Chalcopyrite lattice -- 2.2 Band-gap energies -- 2.3 The phase diagram -- 2.4 Defect physics of Cu(In,Ga)Se2 -- 3 Cell and Module Technology -- 3.1 Structure of the heterojunction solar cell -- 3.2 Key elements for high-efficiency Cu(In,Ga)Se2 solar cells -- 3.3 Absorber preparation techniques -- 3.3.1 Basics -- 3.3.2 Coevaporation processes -- 3.3.3 Selenization processes -- 3.3.4 Other absorber deposition processes -- 3.3.5 Postdeposition air anneal -- 3.4 Heterojunction formation -- 3.4.1 The free Cu(In,Ga)Se2 surface -- 3.4.2 Buffer layer deposition -- 3.4.3 Window layer deposition -- 3.5 Module production and commercialization -- 3.5.1 Monolithic interconnections -- 3.5.2 Module fabrication -- 3.5.3 Upscaling achievements -- 3.5.4 Stability -- 3.5.5 Radiation hardness and space applications -- 4 Device Physics -- 4.1 The band diagram -- 4.2 Short-circuit current -- 4.3 Open-circuit voltage -- 4.4 Fill factor -- 4.5 Electronic metastabilities -- 5 Wide-Gap Chalcopyrites -- 5.1 Basics -- 5.2 CuGaSe2 -- 5.3 Cu(In,Al)Se2 -- 5.4 CuInS2 and Cu(In,Ga)S2 -- 5.5 Cu(In,Ga)(Se,S)2 -- 5.6 Graded-gap devices -- 6 Conclusions -- Acknowledgments -- References -- Further Reading -- I-4 Space and Concentrator Cells -- I-4-A GaAs and High-Efficiency Space Cells -- 1 Historical Review of III-V Solar Cells -- 2 Single-Junction III-V Space Solar Cells -- 2.1 Solar cells based on AlGaAs-GaAs structures -- 2.2 Solar cells with internal Bragg reflector -- 2.3 GaAs-based cells on Ge substrates -- 3 Multijunction Space Solar Cells -- 3.1 Mechanically stacked cells -- 3.2 Monolithic multijunction solar cells -- Acknowledgments -- References -- Further Reading.
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