Nitride wide bandgap semiconductor material and electronic devices

Saved in:
Bibliographic Details
Main Authors Hao, Yue, 1958 March- (Author), Zhang, Jinfeng, 1977- (Author), Zhang, Jincheng, 1976- (Author)
Format Electronic eBook
LanguageEnglish
Published Boca Raton, Florida : CRC Press, 2017.
Subjects
Nitrides.
Wide gap semiconductors > Design and construction.
Epitaxy.
Microelectronics > Materials.
elektronické knihy
electronic books
Online AccessFull text
ISBN149874513X
9781498745130
9781523108404
1523108401
9781315368856
1315368854
9781498745123
1498745121
9781315332796
1315332795
Physical Description1 online resource (389 pages) : illustrations, tables

Cover

Table of Contents:
  • Chapter 1. Introduction
  • Chapter 2. Properties of group III nitride semiconductor materials
  • Chapter 3. Heteroepitaxial growth and defect properites of nitrides
  • Chapter 4. Electrical properties and related mechanisms of GaN heterostructures used in high electron mobility transistors
  • Chapter 5. Growth and optimization of AlGaN/Gan heterostructures
  • Chapter 6. AlGaN/GaN multiple heterostructure materials and electronic devices
  • Chapter 7. Growth of InAlN/Gan heterostructures by pulsed MOCVD
  • Chapter 8. Defects and physical properties of group III nitrides
  • Chapter 9. Principles and optimization of GaN HEMTs
  • Chapter 10. Preparation and performance of GaN HEMTs
  • Chapter 11. Electrical and thermal degradation and reliability of GaN HEMTs
  • Chapter 12. Enhancement-mode GaN HEMTs and integrated circuits
  • Chapter 13. GaN metal-oxide-semiconductor high electron mobility transistors
  • Chapter 14. Development of nitride semiconductor materials and electronic devices.

Similar Items