http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Nitride wide bandgap semiconductor material and electronic devices
1 online resource (389 pages) : illustrations, tables
Chapter 1. Introduction -- Chapter 2. Properties of group III nitride semiconductor materials -- Chapter 3. Heteroepitaxial growth and defect properites of nitrides -- Chapter 4. Electrical properties and related mechanisms of GaN heterostructures used in high electron mobility transistors -- Chapter 5. Growth and optimization of AlGaN/Gan heterostructures -- Chapter 6. AlGaN/GaN multiple heterostructure materials and electronic devices -- Chapter 7. Growth of InAlN/Gan heterostructures by pulsed MOCVD -- Chapter 8. Defects and physical properties of group III nitrides -- Chapter 9. Principles and optimization of GaN HEMTs -- Chapter 10. Preparation and performance of GaN HEMTs -- Chapter 11. Electrical and thermal degradation and reliability of GaN HEMTs -- Chapter 12. Enhancement-mode GaN HEMTs and integrated circuits -- Chapter 13. GaN metal-oxide-semiconductor high electron mobility transistors -- Chapter 14. Development of nitride semiconductor materials and electronic devices.
Yue Hao, Jin-Feng Zhang, Jin-Cheng Zhang.
Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
Includes bibliographical references and index.