rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Nitride wide bandgap semiconductor material and electronic devices
  name:
    name part: Hao, Yue
    name part: 1958 March-
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Zhang, Jinfeng
    name part: 1977-
    role:
      role term: author.
  name:
    name part: Zhang, Jincheng
    name part: 1976-
    role:
      role term: author.
  type of resource: text
  genre: bibliography
  genre: elektronické knihy
  genre: electronic books
  origin info:
    place:
      place term: flu
    date issued: 2017
    copyright date: 2017
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (389 pages) : illustrations, tables
  table of contents: Chapter 1. Introduction -- Chapter 2. Properties of group III nitride semiconductor materials -- Chapter 3. Heteroepitaxial growth and defect properites of nitrides -- Chapter 4. Electrical properties and related mechanisms of GaN heterostructures used in high electron mobility transistors -- Chapter 5. Growth and optimization of AlGaN/Gan heterostructures -- Chapter 6. AlGaN/GaN multiple heterostructure materials and electronic devices -- Chapter 7. Growth of InAlN/Gan heterostructures by pulsed MOCVD -- Chapter 8. Defects and physical properties of group III nitrides -- Chapter 9. Principles and optimization of GaN HEMTs -- Chapter 10. Preparation and performance of GaN HEMTs -- Chapter 11. Electrical and thermal degradation and reliability of GaN HEMTs -- Chapter 12. Enhancement-mode GaN HEMTs and integrated circuits -- Chapter 13. GaN metal-oxide-semiconductor high electron mobility transistors -- Chapter 14. Development of nitride semiconductor materials and electronic devices.
  note: Yue Hao, Jin-Feng Zhang, Jin-Cheng Zhang.
  note: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  note: Includes bibliographical references and index.
  subject:
    topic: Nitrides
  subject:
    topic: Wide gap semiconductors
    topic: Design and construction
  subject:
    topic: Epitaxy
  subject:
    topic: Microelectronics
    topic: Materials
  identifier: 149874513X
  identifier: 9781498745130
  identifier: 9781523108404
  identifier: 1523108401
  identifier: 9781315368856
  identifier: 1315368854
  identifier: 9781498745123
  identifier: 1498745121
  identifier: 9781315332796
  identifier: 1315332795
  identifier: https://proxy.k.utb.cz/login
  access condition: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  record info:
    record content source: IDEBK
    record creation date: 161123
    record change date: 20240717213016.0
    record identifier: kn-ocn965143699
    language of cataloging:
      language term: eng