Nitride wide bandgap semiconductor material and electronic devices

Saved in:
Bibliographic Details
Main Authors: Hao, Yue, 1958 March- (Author), Zhang, Jinfeng, 1977- (Author), Zhang, Jincheng, 1976- (Author)
Format: eBook
Language: English
Published: Boca Raton, Florida : CRC Press, 2017.
Subjects:
Nitrides.
Wide gap semiconductors > Design and construction.
Epitaxy.
Microelectronics > Materials.
elektronické knihy
electronic books
ISBN: 149874513X
9781498745130
9781523108404
1523108401
9781315368856
1315368854
9781498745123
1498745121
9781315332796
1315332795
Physical Description: 1 online resource (389 pages) : illustrations, tables

Cover

Table of contents

LEADER 03411cam a2200541 i 4500
001 kn-ocn965143699
003 OCoLC
005 20240717213016.0
006 m o d
007 cr cn|||||||||
008 161123t20172017flua ob 001 0 eng d
040 |a IDEBK  |b eng  |e rda  |e pn  |c IDEBK  |d OCLCO  |d CRCPR  |d OCLCO  |d STF  |d COO  |d OCLCQ  |d YDX  |d KNOVL  |d UPM  |d NRC  |d PIFBY  |d OTZ  |d OCLCQ  |d UAB  |d OCLCQ  |d CNCGM  |d CAUOI  |d ERL  |d OCLCF  |d OCLCQ  |d U3W  |d S9I  |d TYFRS  |d AU@  |d OCLCQ  |d OCLCO  |d OCLCQ  |d SFB  |d OCLCQ  |d OCLCO  |d OCLCL 
020 |a 149874513X  |q (electronic bk.) 
020 |a 9781498745130  |q (electronic bk.) 
020 |a 9781523108404  |q (electronic bk.) 
020 |a 1523108401  |q (electronic bk.) 
020 |a 9781315368856 
020 |a 1315368854 
020 |a 9781498745123 
020 |a 1498745121 
020 |a 9781315332796 
020 |a 1315332795 
020 |z 9781498745130 
020 |z 1498745121 
024 7 |a 10.1201/9781315368856  |2 doi 
035 |a (OCoLC)965143699 
100 1 |a Hao, Yue,  |d 1958 March-  |e author.  |1 https://id.oclc.org/worldcat/entity/E39PCjyJrChqTGFxQMdWwhh6qP 
245 1 0 |a Nitride wide bandgap semiconductor material and electronic devices /  |c Yue Hao, Jin-Feng Zhang, Jin-Cheng Zhang. 
264 1 |a Boca Raton, Florida :  |b CRC Press,  |c 2017. 
264 4 |c ©2017 
300 |a 1 online resource (389 pages) :  |b illustrations, tables 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
505 0 |a Chapter 1. Introduction -- Chapter 2. Properties of group III nitride semiconductor materials -- Chapter 3. Heteroepitaxial growth and defect properites of nitrides -- Chapter 4. Electrical properties and related mechanisms of GaN heterostructures used in high electron mobility transistors -- Chapter 5. Growth and optimization of AlGaN/Gan heterostructures -- Chapter 6. AlGaN/GaN multiple heterostructure materials and electronic devices -- Chapter 7. Growth of InAlN/Gan heterostructures by pulsed MOCVD -- Chapter 8. Defects and physical properties of group III nitrides -- Chapter 9. Principles and optimization of GaN HEMTs -- Chapter 10. Preparation and performance of GaN HEMTs -- Chapter 11. Electrical and thermal degradation and reliability of GaN HEMTs -- Chapter 12. Enhancement-mode GaN HEMTs and integrated circuits -- Chapter 13. GaN metal-oxide-semiconductor high electron mobility transistors -- Chapter 14. Development of nitride semiconductor materials and electronic devices. 
504 |a Includes bibliographical references and index. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Nitrides. 
650 0 |a Wide gap semiconductors  |x Design and construction. 
650 0 |a Epitaxy. 
650 0 |a Microelectronics  |x Materials. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Zhang, Jinfeng,  |d 1977-  |e author.  |1 https://id.oclc.org/worldcat/entity/E39PCjHQccfRxPyGQgpjqQMfD3 
700 1 |a Zhang, Jincheng,  |d 1976-  |e author.  |1 https://id.oclc.org/worldcat/entity/E39PCjFXcvxfxvHVVq4MMGYfhd 
776 0 8 |i Print version:  |z 9781498745123 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpNWBSMEDE/nitride-wide-bandgap?kpromoter=marc  |y Full text 

Similar Items