Nano devices and sensors
"The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engi...
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Other Authors: | , , |
Format: | eBook |
Language: | English |
Published: |
Boston ; Berlin :
De Gruyter,
[2016]
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Subjects: | |
ISBN: | 9781501501531 1501501534 9781501501555 1501501550 9781523104611 1523104619 9781501501548 1501501542 9781501510502 1501510509 |
Physical Description: | 1 online resource (220 pages) : illustrations |
LEADER | 04202cam a2200517 i 4500 | ||
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001 | kn-ocn948780477 | ||
003 | OCoLC | ||
005 | 20240717213016.0 | ||
006 | m o d | ||
007 | cr cn||||||||| | ||
008 | 160506t20162016maua ob 100 0 eng d | ||
040 | |a IDEBK |b eng |e rda |e pn |c IDEBK |d YDXCP |d OCLCO |d CN3GA |d EBLCP |d COO |d OCLCF |d N$T |d YDX |d KNOVL |d MYG |d DEBSZ |d STF |d OCLCQ |d CCO |d WAU |d COCUF |d LOA |d MERUC |d K6U |d AGLDB |d ICA |d PIFAG |d FVL |d NRC |d OCLCQ |d OCLCO |d DEGRU |d ZCU |d U3W |d D6H |d WRM |d OCLCQ |d VTS |d ICG |d OTZ |d VT2 |d AU@ |d WYU |d OCLCQ |d TKN |d LEAUB |d AUW |d BTN |d INTCL |d MHW |d SNK |d OCLCO |d DKC |d OCLCQ |d OCLCO |d OCLCQ |d AJS |d OCLCO |d OCLCQ |d OCLCO |d OCLCL | ||
020 | |a 9781501501531 |q (pdf) | ||
020 | |a 1501501534 |q (pdf) | ||
020 | |a 9781501501555 |q (epub) | ||
020 | |a 1501501550 |q (epub) | ||
020 | |a 9781523104611 |q (electronic book) | ||
020 | |a 1523104619 |q (electronic book) | ||
020 | |a 9781501501548 |q (print + online) | ||
020 | |a 1501501542 |q (print + online) | ||
020 | |z 9781501510502 |q (cloth) | ||
020 | |z 1501510509 |q (cloth) | ||
024 | 7 | |a 10.1515/9781501501531 |2 doi | |
035 | |a (OCoLC)948780477 |z (OCoLC)949883233 |z (OCoLC)958448369 |z (OCoLC)1162387446 |z (OCoLC)1228567447 | ||
111 | 2 | |a International Symposium on Next-Generation Electronics |n (4th : |d 2015 : |c Taipei, Taiwan) | |
245 | 1 | 0 | |a Nano devices and sensors / |c edited by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. |
264 | 1 | |a Boston ; |a Berlin : |b De Gruyter, |c [2016] | |
264 | 4 | |c ©2016 | |
300 | |a 1 online resource (220 pages) : |b illustrations | ||
336 | |a text |b txt |2 rdacontent | ||
337 | |a computer |b c |2 rdamedia | ||
338 | |a online resource |b cr |2 rdacarrier | ||
500 | |a Selection of papers from 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. | ||
504 | |a Includes bibliographical references. | ||
506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
520 | |a "The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies"--Provided by publisher | ||
505 | 0 | |a Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-æW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-æm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors. | |
590 | |a Knovel |b Knovel (All titles) | ||
650 | 0 | |a Nanoelectronics |v Congresses. | |
655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
655 | 9 | |a electronic books |2 eczenas | |
700 | 1 | |a Liou, Juin J., |e editor. | |
700 | 1 | |a Liaw, Shien-Kuei, |e editor. | |
700 | 1 | |a Chung, Yung-Hui, |e editor. | |
776 | 0 | 8 | |i Print version: |a International Symposium on Next-Generation Electronics (4th : 2015 : Taipei, Taiwan). |t Nano devices and sensors. |d Berlin ; Boston : De Gruyter, [2016] |z 9781501510502 |w (DLC) 2016016432 |w (OCoLC)948968348 |
856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpNDS0000R/nano-devices-and?kpromoter=marc |y Full text |