Semiconductor Nanowires. II, Properties and Applications /

Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. This book will be of interest to scientists and engineers performing fundamental and applied research and technology development in the field of one-dimensional nanowires. T...

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Bibliographic Details
Other Authors: Dayeh, Shadi A., (Editor), Fontcuberta i Morral, Anna, (Editor), Jagadish, C. (Editor)
Format: eBook
Language: English
Published: Cambridge, MA : Academic Press, 2016.
Edition: First edition.
Series: Semiconductors and semimetals ; v. 94.
Subjects:
Semiconductors.
Nanotechnology.
elektronické knihy
electronic books
ISBN: 9780128041444
0128041447
9780128040164
0128040165
Physical Description: 1 online resource (xii, 410 pages : illustrations).

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020 |z 0128040165 
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245 0 0 |a Semiconductor Nanowires.  |n II,  |p Properties and Applications /  |c edited by Shadi A. Dayeh, Anna Fontcuberta i Morral, Chennupati Jagadish. 
250 |a First edition. 
264 1 |a Cambridge, MA :  |b Academic Press,  |c 2016. 
300 |a 1 online resource (xii, 410 pages :  |b illustrations). 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Semiconductors and semimetals ;  |v volume ninety four 
504 |a Includes bibliographical references. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. This book will be of interest to scientists and engineers performing fundamental and applied research and technology development in the field of one-dimensional nanowires. The book will particularly appeal to physicists, chemists, materials scientists, electronics engineers and mechanical engineers. This book will be of interest to students, researchers and practitioners working in the field of semiconductors, mechanical, electronic and optoelectronic devices. 
505 0 |a Front Cover; Semiconductor Nanowires II: Properties and Applications; Copyright; Contents; Contributors; Preface; Chapter One: Semiconductor Nanowire Optoelectronic Devices; 1. Introduction; 2. Waveguiding Properties of Semiconductor Nanowires; 2.1. Solutions to Maxwellś Equations: Guided and Leaky Modes; 3. Tailored Emission and Out-Coupling of Light from Nanowires; 4. Nanowire Solar Cells; 5. Nanowire Lasers; 6. Concluding Remarks; Acknowledgments; References; Chapter Two: Optical Properties of Semiconductor Nanowires: Insights into Band Structure and Carrier Dynamics; 1. Introduction 
505 8 |a 2. Experimental Spectroscopies2.1. Single Nanowire Imaging at low Temperatures; 2.2. CW Spectroscopies; 2.2.1. Micro-Raman Spectroscopy; 2.2.2. Microphotoluminescence Spectroscopy; 2.2.3. Photoluminescence Excitation Spectroscopy; 2.2.4. Photocurrent Spectroscopy; 2.3. Time-Resolved Spectroscopies; 2.3.1. Time-Resolved Photoluminescence; 2.3.2. Transient Rayleigh Scattering; 2.4. Summary; 3. Semiconductor Growth: Optimization; 3.1. Increasing the Quantum Efficiency; 3.2. Reduction of Carbon Incorporation; 4. Strain and Core-Shell Nanowires; 4.1. Core-Shell GaAs/Gap nanowires 
505 8 |a 4.2. Axial GaAs-GaP Nanowires5. Symmetries and Band Structure in wurtzite Nanowires; 5.1. Introduction; 5.2. Wurtzite InP Nanowires; 5.2.1. Band Structure; 5.2.2. Symmetries; 5.2.3. ZB/WZ InP Axial Heterostructures; 5.3. Wurtzite GaAs Nanowires; 5.3.1. Band Structure; 5.4. Summary; 6. Quantum Nanowire Heterostructures; 6.1. Introduction; 6.2. QWT Energy Structure; 6.3. Quantum Dots in QWT; 6.4. Summary and Future Directions; 7. Photoexcited Carrier Dynamics; 7.1. Many Body Effects in Nanowires; 7.2. Decay and Thermalization of Hot Carriers in Nanowires 
505 8 |a 7.3. Hot Carrier and Hot Phonons in GaAs and InP NWs8. Conclusions and Future Prospects; Acknowledgments; References; Chapter Three: Compound Semiconductor Nanowire Photodetectors; 1. Introduction; 2. Nanowire Photoconductors; 2.1. General Description of Nanowire Photoconductivity; 2.2. Light Absorption; 2.2.1. Optical Birefringence and Light Polarization Effects; 2.2.2. Light Scattering and Absorption Enhancement in Vertical NW Arrays; 2.3. Nanowire Photoconductor Materials; 2.3.1. Group III-V Compounds; 2.3.2. Nitride Nanowire Photoconductors; 2.3.3. Group II-VI; 3. Phototransistors 
505 8 |a 4. Nanowire Heterostructures4.1. Homogeneous and Heterogeneous Photodiode Junctions; 4.2. Schottky Junctions; 4.3. Avalanche Photodiodes; 5. Summary and Conclusions; Acknowledgments; References; Chapter Four: Mechanical Behaviors of Semiconductor Nanowires; 1. Introduction; 2. Experimental Techniques by In Situ Microscopy; 2.1. Bending; 2.2. Resonance; 2.3. Uniaxial Loading; 2.4. Nanoindentation; 3. Mechanical Behaviors of NWs; 3.1. Youngś Modulus; 3.2. Elastic Strain; 3.3. Anelasticity; 3.4. Plastic Strain; 3.5. Fracture Strength; 3.6. Fatigue; 3.7. Self-Healing; 4. Summary; References 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Semiconductors. 
650 0 |a Nanotechnology. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Dayeh, Shadi A.,  |e editor. 
700 1 |a Fontcuberta i Morral, Anna,  |e editor. 
700 1 |a Jagadish, C.  |q (Chennupati),  |e editor. 
776 0 8 |i Print version:  |z 0128040165  |z 9780128040164  |w (OCoLC)921864836 
830 0 |a Semiconductors and semimetals ;  |v v. 94. 
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