Semiconductor Nanowires. I, Growth and Theory /
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| Other Authors | , , |
|---|---|
| Format | Electronic eBook |
| Language | English |
| Published |
Waltham, MA :
Academic Press is an imprint of Elsevier,
2015.
|
| Series | Semiconductors and semimetals ;
v. 93. |
| Subjects | |
| Online Access | Full text |
| ISBN | 9780128030448 0128030445 0128030275 9780128030271 |
| Physical Description | 1 online resource (x, 314 pages : illustrations |
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| LEADER | 00000cam a2200000 i 4500 | ||
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| 003 | OCoLC | ||
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| 008 | 151201s2015 maua ob 001 0 eng d | ||
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| 245 | 0 | 0 | |a Semiconductor Nanowires. |n I, |p Growth and Theory / |c edited by Anna Fontcuberta I. Morral, Shadi A. Dayeh and Chennupati Jagadish. |
| 246 | 3 | 0 | |a Growth and Theory |
| 264 | 1 | |a Waltham, MA : |b Academic Press is an imprint of Elsevier, |c 2015. | |
| 300 | |a 1 online resource (x, 314 pages : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v volume 93 | |
| 505 | 0 | |a Front Cover; Semiconductor Nanowires I: Growth and Theory; Copyright; Contents; Contributors; Preface; Chapter One: Theory of VLS Growth of Compound Semiconductors; 1. Introduction; 2. Fundamentals of VLS Growth; 3. Chemical Potentials for Au-Catalyzed VLS Growth of III-V Nanowires; 4. Growth Kinetics of III-V Nanowires; 5. Transport-Limited Growth of Nanowires; 6. Nucleation Rate in VLS Nanowires; 7. Position-Dependent Nucleation in Nanowires; 8. Self-consistent Growth Equation; 9. Ga-Catalyzed Growth of GaAs Nanowires; 10. Formation of Ternary Au-Catalyzed III-V Nanowires. | |
| 505 | 8 | |a 11. Impact of Growth Conditions on the Crystal Structure of III-V NanowiresReferences; Chapter Two: Strain in Nanowires and Nanowire Heterostructures; 1. Introduction; 1.1. Scope; 1.2. Heterostructures, Mismatch, and Accommodation; 1.3. Nanowire Specificities; 2. Methods of Calculation and Measurement of Strain in Nanowires; 2.1. Calculation of Elastic Strain; 2.2. Experimental Assessment of Elastic Strain and Plastic Relaxation; 3. Axial Heterostructures; 3.1. Calculation of Elastic Relaxation in Axial Heterostructures. | |
| 505 | 8 | |a 3.2. Critical Dimensions for the Plastic Relaxation of Axial Heterostructures3.2.1. Theory; 3.2.2. Experiments; 4. Nanowires on a Misfitting Substrate; 5. Core-Shell Heterostructures; 5.1. Elastic Relaxation in Core-Shell Heterostructures: Theoretical Considerations; 5.2. Plastic Relaxation and Critical Dimensions in Core-Shell Heterostructures; 5.2.1. Theoretical Considerations; 5.2.2. Calculations; 5.2.3. Which Dislocations May Actually Form?; 5.2.4. Results; 5.2.5. Experiments; 6. Other Possible Instances of Strain Relaxation in NWs. | |
| 505 | 8 | |a 6.1. Augmented Strain Relaxation via Morphological Changes6.2. Stacking Faults, Twins, and Polytypism; 6.3. Sidewall-Induced and Edge-Induced Strains; 7. Summary and Conclusions; References; Chapter Three: van der Waals Heteroepitaxy of Semiconductor Nanowires; 1. Introduction; 1.1. Heteroepitaxy of Semiconductors on Atomic-Layered Materials (ALMs); 1.2. van der Waals Epitaxy (Versus Covalent Epitaxy); 2. van der Waals (vdW) Heteroepitaxy of Semiconductor Nanowires; 2.1. Vertically Aligned Nanowires on 2d-ALMs; 2.2. Nanowire Heterostructure. | |
| 505 | 8 | |a 2.3. vdW Epitaxial Nanowires on a Monoatomic Layer Substrate2.4. vdW Epitaxial Double Heterostructure: InAs/Graphene/InAs; 3. vdW Heteroepitaxial Relationship and Heterointerface of Nanowire/2d-ALM; 3.1. Nearly Commensurate System: InAs/Graphene; 3.2. Highly Incommensurate System: ZnO/hBN and ZnO/Mica; 4. Controlled vdW Epitaxy of Semiconductor Nanowires; 4.1. Nucleation and Growth on 2d-ALM with Surface Imperfections; 4.2. Position- and Shape-Controlled vdW Epitaxy; 5. Optoelectronic Device Applications; 6. Conclusions and Perspectives; Acknowledgment; References. | |
| 504 | |a Includes bibliographical references and index. | ||
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
| 590 | |a Knovel |b Knovel (All titles) | ||
| 650 | 0 | |a Nanowires. | |
| 650 | 0 | |a Semiconductors |x Materials. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 700 | 1 | |a Fontcuberta i Morral, Anna, |e editor. |1 https://id.oclc.org/worldcat/entity/E39PBJk4DgGvJVx9tmTg8tFdwC | |
| 700 | 1 | |a Dayeg, Shadi A., |e editor. | |
| 700 | 1 | |a Jagadish, C. |q (Chennupati), |e editor. |1 https://id.oclc.org/worldcat/entity/E39PBJf8rtGMxrfJQDqDCqFkDq | |
| 776 | 0 | 8 | |i Print version: |a Fontcuberta i Morral, Anna. |t Semiconductor Nanowires I: Growth and Theory. |d : Elsevier Science, ©2015 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 93. | |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpSSVSNIG1/semiconductors-and-semimetals?kpromoter=marc |y Full text |