ISTFA 2013 : conference proceedings from the 39th International Symposium for Testing and Failure Analysis, November 3-7, 2013, San Jose Convention Center, San Jose, California, USA

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Bibliographic Details
Corporate Author: International Symposium for Testing and Failure Analysis San Jose, Calif.)
Format: eBook
Language: English
Published: Materials Park, Ohio : ASM International, 2013.
Subjects:
ISBN: 9781627080231
1627080236
9781680155136
168015513X
9781627080224
Physical Description: 1 online resource (633 pages) : color illustrations, charts, photographs, graphs, tables

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Table of contents

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020 |z 9781627080224 
035 |a (OCoLC)891400347  |z (OCoLC)894025527  |z (OCoLC)923571153  |z (OCoLC)929147972  |z (OCoLC)961515216  |z (OCoLC)962633563  |z (OCoLC)1259226922 
111 2 |a International Symposium for Testing and Failure Analysis  |n (39th :  |d 2013 :  |c San Jose, Calif.) 
245 1 0 |a ISTFA 2013 :  |b conference proceedings from the 39th International Symposium for Testing and Failure Analysis, November 3-7, 2013, San Jose Convention Center, San Jose, California, USA /  |c sponsored by Electronic Device Failure Analysis Society. 
264 1 |a Materials Park, Ohio :  |b ASM International,  |c 2013. 
264 4 |c ©2013 
300 |a 1 online resource (633 pages) :  |b color illustrations, charts, photographs, graphs, tables 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references at the end of each chapters and index. 
505 0 |a Title Page -- Copyright -- Board of Directors -- Organizing Committee -- Symposium Committee -- User Groups -- Contents -- 2013 IPFA Best Paper -- Non-Destructive Open Fault Isolation in Flip-Chip Devices with Space-Domain Reflectometry -- 3D Packages -- 3D Void Imaging in Through Silicon Vias by X-ray Nanotomography in a SEM -- Challenges for Physical Failure Analysis of 3D-Integrated Devices -- Sample Preparation and Analysis to Support Process Development of TSVs -- Sample Preparation Strategies for Fast and Effective Failure Analysis of 3D Devices 
505 8 |a Fast and Precise 3D Tomography of TSV by Using Xe Plasma FIBCase Studies and the Failure Analysis Process -- 22 nm BEOL TDDB Defect Localization and Root Cause Analysis -- Open Failure Diagnosis Candidate Selection Based on Passive Voltage Contrast Potential and Processing Cost -- Effective Defect Localization on Nanoscale Short Failures -- Defect Isolation Tools Accelerate the Failure Analysis Process -- First in Operando SEM Observation of Electromigration-Induced Voids in TSV Structures 
505 8 |a The Application of Magnetic Force Microscopy for Detection of Subsurface Anomalies in Semiconductor Device Wiring LevelsComputed Tomography as Failure Analysis Insurance -- Challenges of Small Defect Analysis in Large Analog Power FET Arrays -- Conversion of a D-Mode FET to an E-Mode FET via Electrostatic Discharge in a GaAs Power Amplifier Duplexer Module -- Marginal RF Gain Investigation and Root Cause Determination -- Anamnesis in Failure Analysis -- How a System-Related Approach Can Save Failure Analysis (FA) Time, Shorten Learning Loops and Reduce Cost 
505 8 |a Failure Analysis for SRAM Logic Type FailuresCircuit Edit -- Circuit Edit Geometric Trends -- Implications of Helium and Neon Ion Beam Chemistry for Advanced Circuit Editing -- Silicon and Package Preparation Options for Focused Ion Beam (FIB) Circuit Editing and General Packaging Failure Analysis -- Defect Characterization and Metrology -- Simulation Studies on Fluorine Spec Limit for Process Monitoring of Microchip Al Bondpads in Wafer Fabrication -- Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch 
505 8 |a Gate Leakage Characterization and Fail Mode Analysis on 20 nm Technology Parametric Test StructuresSTEM EDX Mappings and Tomography for Process Characterization and Physical Failure Analysis of Advanced Devices -- Automatic Registering and Stitching of TEM/STEM Image Mosaics -- AFM-Based Chemical and Mechanical Property Characterization of Interconnects and Defects -- Evaluation of Digital Holography Microscopy for Roughness Control Prior Wafer Direct Bonding -- Emerging Concepts and Techniques -- Pump-Probe Imaging of Integrated Circuits 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Electronics  |x Materials  |x Testing  |v Congresses. 
650 0 |a Electronic apparatus and appliances  |x Testing  |v Congresses. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
710 2 |a Electronic Device Failure Analysis Society,  |e sponsor. 
776 0 8 |i Print version:  |a International Symposium for Testing and Failure Analysis (39th : 2013 : San Jose, California).  |t ISTFA 2013 : conference proceedings from the 39th International Symposium for Testing and Failure Analysis, November 3-7, 2013, San Jose Convention Center, San Jose, California, USA.  |d Materials Park, Ohio : ASM International, ©2013  |h xix, 613 pages  |z 9781627080224 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpISTFAC25/istfa-2013-conference?kpromoter=marc  |y Full text