Advances in Photovoltaics. Part 3 /
This volume is the third of a set of seven on the topic of photovoltaics. Solar cell-related technologies covered here include: ribbon silicon; heterojunction crystalline silicon; wafer equivalent crystalline silicon; and other advanced silicon solar cell structures and processes. Semiconductors and...
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| Other Authors | , |
|---|---|
| Format | Electronic eBook |
| Language | English |
| Published |
Amsterdam :
Academic Press,
2014.
|
| Series | Semiconductors and semimetals ;
v. 90. |
| Subjects | |
| Online Access | Full text |
| ISBN | 9780123884183 0123884187 0123884179 9780123884176 |
| ISSN | 0080-8784 ; |
| Physical Description | 1 online resource (x, 167 pages : illustrations |
Cover
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| 245 | 0 | 0 | |a Advances in Photovoltaics. |n Part 3 / |c volume editor, Gerhard P. Willeke, Eicke R. Weber. |
| 264 | 1 | |a Amsterdam : |b Academic Press, |c 2014. | |
| 300 | |a 1 online resource (x, 167 pages : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and Semimetals, |x 0080-8784 ; |v Volume 90 | |
| 505 | 0 | |a Front Cover; Advances in Photovoltaics: Part 3; Copyright; Contents; Contributors; Preface; Chapter One: State-of-the-Art Industrial Crystalline Silicon Solar Cells; 1. Introduction; 1.1. History; 1.2. General routes for cost reduction; 1.3. PV market today; 1.4. Basic structure of an industrial c-Si solar cell; 2. Operation Principle of a c-Si Solar Cell; 2.1. Band diagram; 2.2. Solar cell parameters; 2.3. Fundamental efficiency limit of an ideal c-Si solar cell; 2.4. Two-diode model; 2.5. Radiative recombination; 2.6. Auger recombination; 2.7. SRH recombination; 2.8. Surface recombination. | |
| 505 | 8 | |a 2.9. Recombination and saturation current density2.10. Optical losses; 3. The Basic Firing Through SiNx:H Process; 3.1. Wafer washing, texturization, and cleaning; 3.2. Phosphorus diffusion; 3.2.1. Phosphorus diffusion gettering of impurities; 3.3. Edge isolation; 3.4. SiNx:H deposition; 3.5. Metallization via screen-printing; 3.5.1. Front side metallization; 3.5.2. Rear side metallization; 3.5.3. Co-firing step; 3.6. Solar cell characterization; 4. Recent Developments on Solar Cell Front Side; 4.1. Wafer sawing; 4.2. Alkaline wafer texturing; 4.3. Front contact metallization. | |
| 505 | 8 | |a 4.3.1. Double print4.3.2. Dual print; 4.3.3. Stencil printing; 4.3.4. Dispensing; 4.3.5. Paste development; 4.3.6. Seed-and-plate; 4.3.7. Multi-busbar approaches; 5. Advanced Emitter Formation; 5.1. Improvement of homogeneous emitters; 5.2. Selective emitters; 5.2.1. Doped Si inks; 5.2.2. Oxide mask process; 5.2.3. Ion implantation process; 5.2.4. Etch-back process; 5.2.5. Laser doping via P-glass; 5.2.6. Laser doping via laser chemical processing and NiAg light-induced plating; 5.2.7. Laser doping and plating; 5.2.8. Effect of encapsulation on blue response. | |
| 505 | 8 | |a 5.2.9. Efficiency potential of selective emitters6. Industrial PERC-Type Solar Cells; 6.1. Dielectric rear side passivation; 6.1.1. Al2O3 layers; 6.1.2. Al2O3/SiNx:H stacks; 6.1.3. SiO2/SiNx:H stacks; 6.2. Formation of local rear contacts; 6.2.1. Laser fired contacts; 6.2.2. Etching paste; 6.2.3. Laser ablation; 6.2.4. Contact patterns and void formation; 6.2.5. Interconnection issues; 6.3. Boron-oxygen related degradation; 6.3.1. Strategies to deal with B-O related degradation; 6.3.2. Regeneration of B-O related defects; 6.4. State-of-the-art industrial PERC solar cells. | |
| 505 | 8 | |a 7. Summary and OutlookAcknowledgments; References; Chapter Two: Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells; 1. Introduction; 2. Passivating c-Si Surfaces with a-Si:H; 2.1. Recombination at surfaces; 2.2. Physics of passivation; 2.3. Deposition of high-quality a-Si:H films; 2.4. Surface passivation on n- and p-type wafers; 3. From Passivated Wafers to Complete Solar Cells; 3.1. Wafer cleaning and texturing; 3.2. Electron and hole collectors: Doped a-Si:H layers; 3.3. Transparent conductive oxide layers; 3.4. Metallization; 3.5. Record cells. | |
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
| 520 | |a This volume is the third of a set of seven on the topic of photovoltaics. Solar cell-related technologies covered here include: ribbon silicon; heterojunction crystalline silicon; wafer equivalent crystalline silicon; and other advanced silicon solar cell structures and processes. Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant v | ||
| 504 | |a Includes bibliographical references at the end of each chapters and index. | ||
| 590 | |a Knovel |b Knovel (All titles) | ||
| 650 | 0 | |a Photovoltaic power generation. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 700 | 1 | |a Willeke, G., |d 1954- |e editor. |1 https://id.oclc.org/worldcat/entity/E39PCjGhvR6JB8cWxJfMGGrdHC | |
| 700 | 1 | |a Weber, Eicke R., |e editor. | |
| 776 | 0 | 8 | |i Print version: |z 9780123884176 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 90. | |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpSSVAPP11/semiconductors-and-semimetals?kpromoter=marc |y Full text |