Silicon-germanium (SiGe) nanostructures : production, properties and applications in electronics

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Bibliographic Details
Other Authors Shiraki, Yasuhiro, 1942-, Usami, Noritaka
Format Electronic eBook
LanguageEnglish
Published Cambridge, UK : Philadelphia, PA : Woodhead Pub., 2011.
SeriesWoodhead Publishing in materials.
Subjects
Nanostructured materials.
Silicon alloys.
Germanium alloys.
Electronic circuits.
Nanoelectronics.
elektronické knihy
electronic books
Online AccessFull text
ISBN9781613443729
1613443722
0857091425
9780857091420
9781845696894
1845696891
Physical Description1 online resource (xx, 627 pages) : illustrations.

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Table of Contents:
  • Part 1 Introduction: Structural properties of silicon-germanium (SiGe) nanostructures
  • Electronic band structures of SiGe alloys. Part 2 Formation of nanostructures: Understanding crystal growth mechanisms in SiGe nanostructures
  • Types of SiGe bulk crystal growth methods and their applications
  • SiGe crystal growth using molecular beam epitaxy
  • SiGe crystal growth using chemical vapour deposition
  • Strain engineering of SiGe virtual substrates
  • Formation of silicon-germanium-on-insulator (SGOI)substrates
  • Miscellaneous methods and materials for SiGe based heterostructures
  • Modelling the evolution of germanium islands on silicon(001) thin films
  • Strain engineering of SiGe micro- and nanostructures. Part 3 Material properties of SiGe nanostructures: Self-diffusion and dopant diffusion in germanium (Ge) and SiGe alloys
  • Dislocations and other strain-induced defects in SiGe nanostructures
  • Transport properties of SiGe nanostructures at low temperatures
  • Transport properties of SiGe nanostructures and applications in devices
  • Microcavities and quantum cascade laser structures based on SiGe nanostructures
  • Silicide and germanide technology for interconnections in ultra large scale integrated (ULSI) applications. Part 4 Devices using Si, Ge and SiGe alloys: SiGe heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies
  • SiGe-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies
  • High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)
  • Silicon (Si) and germanium (Ge) in optical devices
  • Spintronics of nanostructured MnGe dilute magnetic semiconductor.

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