rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Reliability and radiation effects in compound semiconductors
  name:
    name part: Johnston, Allan (Allan H.)
    role:
      role term: creator
  type of resource: text
  genre: bibliography
  genre: elektronické knihy
  genre: electronic books
  origin info:
    place:
      place term: si
    place:
      place term: Singapore
    place:
      place term: Hackensack, NJ
    publisher: World Scientific
    date issued: ©2010
    date issued: 2010
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xii, 363 pages) : illustrations
  abstract: This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
  table of contents: Semiconductor fundamentals -- Transistor technologies -- Optoelectronics -- Reliability fundamentals -- Compound semiconductor reliability -- Optoelectronic device reliability -- Radiation environments -- Interactions of radiation with semiconductors -- Displacement damage in compound semiconductors -- Displacement damage in optoelectronic devices -- Radiation damage in optocouplers -- Effects from single particles.
  note: Allan Johnston.
  note: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  note: Includes bibliographical references (page 356) and index.
  subject:
    topic: Compound semiconductors
    topic: Reliability
  subject:
    topic: Compound semiconductors
    topic: Effect of radiation on
  related item:
    title info:
      title: Reliability and radiation effects in compound semiconductors
    name:
      name part: Johnston, Allan (Allan H.).
    origin info:
      publisher: Singapore ; Hackensack, NJ : World Scientific, ©2010
    identifier: (OCoLC)311763222
  identifier: 9781615836871
  identifier: 161583687X
  identifier: 9789814277112
  identifier: 9814277118
  identifier: 981427710X
  identifier: 9789814277105
  identifier: https://proxy.k.utb.cz/login
  access condition: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  record info:
    record content source: KNOVL
    record creation date: 110214
    record change date: 20240717213016.0
    record identifier: kn-ocn701731809
    language of cataloging:
      language term: eng