Properties, processing and applications of gallium nitride and related semiconductors

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Bibliographic Details
Corporate Author: INSPEC (Information service)
Other Authors: Edgar, James H.
Format: eBook
Language: English
Published: London : IEE : INSPEC, ©1999.
Series: EMIS datareviews series ; no. 23.
Subjects:
Gallium nitride.
Light emitting diodes.
Wide gap semiconductors.
Semiconductors > Materials.
elektronické knihy
electronic books
ISBN: 1591248744
9781591248743
0852969538
9780852969533
Physical Description: 1 online resource (xxiii, 656 pages) : illustrations

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Table of contents

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001 kn-ocm62204782
003 OCoLC
005 20240717213016.0
006 m o d
007 cr cn|||||||||
008 051102s1999 enka ob 001 0 eng d
040 |a KNOVL  |b eng  |e pn  |c KNOVL  |d OCLCQ  |d KNOVL  |d ZCU  |d OCLCF  |d KNOVL  |d OCLCO  |d KNOVL  |d OCLCQ  |d WAU  |d SYB  |d OCLCE  |d COO  |d OCLCQ  |d UAB  |d OCLCQ  |d RRP  |d AU@  |d S2H  |d OCLCO  |d OCLCQ  |d OCLCO  |d OCLCL  |d SXB  |d OCLCQ 
020 |a 1591248744  |q (electronic bk.) 
020 |a 9781591248743  |q (electronic bk.) 
020 |a 0852969538 
020 |a 9780852969533 
035 |a (OCoLC)62204782  |z (OCoLC)62096591  |z (OCoLC)594651635  |z (OCoLC)607190536  |z (OCoLC)978153597  |z (OCoLC)1058078571 
042 |a dlr 
245 0 0 |a Properties, processing and applications of gallium nitride and related semiconductors /  |c edited by James H. Edgar [and others]. 
260 |a London :  |b IEE :  |b INSPEC,  |c ©1999. 
300 |a 1 online resource (xxiii, 656 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a EMIS datareviews series ;  |v no. 23 
504 |a Includes bibliographical references and index. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 8 |a Annotation  |b Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Gallium nitride. 
650 0 |a Light emitting diodes. 
650 0 |a Wide gap semiconductors. 
650 0 |a Semiconductors  |x Materials. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Edgar, James H. 
710 2 |a INSPEC (Information service) 
776 0 8 |i Print version:  |t Properties, processing and applications of gallium nitride and related semiconductors.  |d London : IEE : INSPEC, ©1999  |z 0852969538  |w (OCoLC)41158852 
830 0 |a EMIS datareviews series ;  |v no. 23. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpPPAGNRSL/properties-processing-and?kpromoter=marc  |y Full text 

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