http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
1 online resource (xx, 772 pages) : illustrations.
In this volume, the Editor and Contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
The Technology and Design of Molecular Beam Epitaxy Systems -- Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs -- Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties -- Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures -- Elemental Semiconductor Heterostructures̮Growth, Properties, and Applications -- MBE Growth of High Tc Superconductors -- MBE Growth of Artificially-Layered Magnetic Metal Structures -- Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy -- Acknowledgments -- Appendix: Two-Level Diffraction -- References -- Index.
Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
Includes bibliographical references and index.
Park Ridge, N.J. : Noyes Publications, ©1995
Materials science and process technology series
Electronic materials and process technology