rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Molecular beam epitaxy
    sub title: applications to key materials
  name:
    name part: Farrow, R. F. C.
  type of resource: text
  genre: bibliography
  genre: elektronické knihy
  genre: electronic books
  origin info:
    place:
      place term: nju
    place:
      place term: Park Ridge, N.J
    publisher: Noyes Publications
    date issued: ©1995
    date issued: 1995
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xx, 772 pages) : illustrations.
  abstract: In this volume, the Editor and Contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
  table of contents: The Technology and Design of Molecular Beam Epitaxy Systems -- Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs -- Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties -- Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures -- Elemental Semiconductor Heterostructures̮Growth, Properties, and Applications -- MBE Growth of High Tc Superconductors -- MBE Growth of Artificially-Layered Magnetic Metal Structures -- Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy -- Acknowledgments -- Appendix: Two-Level Diffraction -- References -- Index.
  note: edited by Robin F.C. Farrow.
  note: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  note: Includes bibliographical references and index.
  subject:
    topic: Molecular beam epitaxy
  related item:
    title info:
      title: Molecular beam epitaxy
    origin info:
      publisher: Park Ridge, N.J. : Noyes Publications, ©1995
    identifier: (DLC) 94031247
    identifier: (OCoLC)31078964
  related item:
    title info:
      title: Materials science and process technology series
      part name: Electronic materials and process technology
  identifier: 1591240956
  identifier: 9781591240952
  identifier: 9780815518402
  identifier: 0815518404
  identifier: 9780815518389
  identifier: 0815518382
  identifier: 9780080946115
  identifier: 0080946119
  identifier: 9780815513711
  identifier: 0815513712
  identifier: https://proxy.k.utb.cz/login
  access condition: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty
  record info:
    record content source: KNOVL
    record creation date: 011109
    record change date: 20240717213016.0
    record identifier: kn-ocm49708235
    language of cataloging:
      language term: eng