In search of the next memory : inside the circuitry from the oldest to the emerging non-volatile memories

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of e...

Full description

Saved in:
Bibliographic Details
Other Authors: Gastaldi, Roberto, (Editor), Campardo, Giovanni, (Editor)
Format: eBook
Language: English
Published: Cham, Switzerland : Springer, 2017.
Subjects:
Nonvolatile random-access memory.
elektronické knihy
electronic books
ISBN: 9783319477244
9783319477220
Physical Description: 1 online resource (xviii, 247 pages) : illustrations

Cover

Table of contents

LEADER 06565cam a2200457Ii 4500
001 99878
003 CZ-ZlUTB
005 20201229193759.0
006 m o d
007 cr cnu|||unuuu
008 170310s2017 sz a ob 001 0 eng d
040 |a N$T  |b eng  |e rda  |e pn  |c N$T  |d EBLCP  |d IDEBK  |d GW5XE  |d N$T  |d YDX  |d OCLCF  |d NJR  |d AZU  |d UPM  |d VT2  |d OCLCQ  |d UAB  |d IOG  |d MCW  |d U3W  |d CAUOI  |d ICW  |d OCLCQ  |d KSU  |d ESU  |d WYU  |d LVT  |d OCLCQ  |d UKMGB  |d UKAHL  |d OCLCQ  |d ERF  |d UKBTH  |d LEATE  |d OCLCQ  |d SFB  |d OCLCQ  |d SRU 
020 |a 9783319477244  |q (electronic bk.) 
020 |z 9783319477220  |q (print) 
024 7 |a 10.1007/978-3-319-47724-4  |2 doi 
035 |a (OCoLC)974947381  |z (OCoLC)975123557  |z (OCoLC)975477965  |z (OCoLC)975935598  |z (OCoLC)976096966  |z (OCoLC)976206729  |z (OCoLC)984848478  |z (OCoLC)999480771  |z (OCoLC)1005772394  |z (OCoLC)1012091691  |z (OCoLC)1048114337  |z (OCoLC)1066442710  |z (OCoLC)1066622898  |z (OCoLC)1086458507  |z (OCoLC)1112566245  |z (OCoLC)1112921419  |z (OCoLC)1113455360  |z (OCoLC)1117223674  |z (OCoLC)1122810723  |z (OCoLC)1127222347 
245 0 0 |a In search of the next memory :  |b inside the circuitry from the oldest to the emerging non-volatile memories /  |c Roberto Gastaldi, Giovanni Campardo, editors. 
264 1 |a Cham, Switzerland :  |b Springer,  |c 2017. 
300 |a 1 online resource (xviii, 247 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a počítač  |b c  |2 rdamedia 
338 |a online zdroj  |b cr  |2 rdacarrier 
505 0 |a Preface; Contents; Editors and Contributors; 1 Introduction; References; 2 Historical Overview of Solid-State Non-Volatile Memories; 1 The Story; References; 3 Physics and Technology of Emerging Non-Volatile Memories; 1 Challenges in Floating-Gate Memory Scaling; 2 The Future of the Floating-Gate Concept; 2.1 System-Level Management Techniques; 2.2 Dielectric-Materials Engineering; 2.3 Novel Flash Architectures; 3 Alternative Storage Concepts; 3.1 Ferroelectric Memories; 3.2 Magneto-Resistive Memories; 3.3 Phase-Change Memories; 3.4 Resistive RAM. 
505 8 |a 4 Scaling Path and Issues in Various Emerging ArchitecturesReferences; 4 Performance Demands for Future NVM; 1 Introduction; 2 Evolution of NAND; 3 Exploiting the 3rd Dimension: 3D NAND; 4 Breakthrough Approach: Emerging Memories; 4.1 Phase Change Memories (PCM); 4.2 Resistive RAMs (ReRAM); 4.3 The Challenge of Dram Replacement: STT-RAM and FeRAM; 4.4 Ferroelectric Memories (FeRAM); 4.5 Final Considerations; References; 5 Array Organization in Emerging Memories; 1 Introduction; 2 PCM and Array Organization for Unipolar Operation; 3 Bipolar-Operation Array Organization. 
505 8 |a 4 Ferroelectric Memory Architecture5 Cross-Point Array; 6 Write Circuits; 6.1 Introduction; 6.2 Writing PCM Memories; 6.3 Writing ReRAM (Bipolar) and STT-MRAM; 7 Redundancy; 7.1 Introduction; 7.2 Redundancy Schematic; References; 6 Data Sensing in Emerging NVMs; 1 Introduction; 2 Sensing Concept in Flash and DRAM Memory; 3 The Concept of Read Window; 3.1 Sensing Resistance Variations in Memory Cells; 4 Sensing in STT-MRAM; 5 Sensing in Ferroelectric Memories; References; 7 Algorithms to Survive: Programming Operation in Non-Volatile Memories. 
505 8 |a 1 Why Algorithms to Write and Erase Non-volatile Memories?2 Introduction to Flash Algorithms; 3 Write Algorithms for PCMs; 3.1 Introduction; 3.2 Bi-level Programming; 3.3 Multi-level Programming; 4 Phase Distribution in ML Programming; 4.1 Drift Dependence on Programmed Resistance; 4.2 Temperature Dependence on Programmed Resistance; 5 Write Algorithms for ReRAMs; 5.1 ReRAM Technology Overview; 5.2 ReRAM Cell Configuration; 5.3 The Stochastic Variability Problem in ReRAM; 5.4 ReRAM Program Algorithm, an ISPP Implementation; Acknowledgements; References; 8 Error Management. 
505 8 |a 1 The Role of ECC for Mainstream and Emerging Memory2 Basics of Error Correcting Codes; 2.1 Linear Block Codes-Basic Facts; 2.2 Linear Block Codes Matrix Description; 2.3 Error Correction Performance of Linear Block Codes; 2.4 Code Modifications; 2.5 Technology-Independent Estimates; 3 Interesting Codes; 3.1 Single-Parity-Check Codes; 3.1.1 Definition; 3.1.2 Implementation; 3.2 Hamming Codes; 3.2.1 Definition; 3.2.2 Decoding; 3.2.3 Fully Parallel Implementation; 3.3 BCH Codes; 3.3.1 Primer on Finite Fields; 3.3.2 Definition; 3.3.3 Decoding; 3.3.4 Implementation of BM Decoding. 
500 |a Includes index. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers. 
504 |a Includes bibliographical references at the end of each chapters and index. 
590 |a SpringerLink  |b Springer Complete eBooks 
650 0 |a Nonvolatile random-access memory. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Gastaldi, Roberto,  |e editor. 
700 1 |a Campardo, Giovanni,  |e editor. 
776 0 8 |i Print version:  |t In search of the next memory.  |d Cham, Switzerland : Springer, 2017  |z 3319477226  |z 9783319477220  |w (OCoLC)958356276 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://link.springer.com/10.1007/978-3-319-47724-4  |y Plný text 
992 |c NTK-SpringerENG 
999 |c 99878  |d 99878 

Similar Items