Power GaN devices : materials, applications and reliability

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power trans...

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Bibliographic Details
Other Authors Meneghini, Matteo (Editor), Meneghesso, Gaudenzio (Editor), Zanoni, Enrico (Editor)
Format Electronic eBook
LanguageEnglish
Published Switzerland : Springer, 2017.
SeriesPower electronics and power systems (Springer)
Kluwer international series in engineering and computer science. Power electronics & power systems.
Subjects
Semiconductors > Materials.
Gallium nitride.
elektronické knihy
electronic books
Online AccessFull text
ISBN9783319431994
9783319431970
ISSN2196-3185
Physical Description1 online resource (x, 380 pages) : illustrations

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Table of Contents:
  • 1. Properties and advantages of gallium nitride / Daisuke Ueda
  • 2. Substrate issues and epitaxial growth / Stacia Keller
  • 3. GaN-on-Silicon CMOS compatible process / Denis Marcon and Steve Stoffels
  • 4. Lateral GaN-based power devices / Umesh K. Mishra and Matthew Guidry
  • 5. GaN-based vertical transistors / Srabanti Chowdury
  • 6. GaN-based nanowire transistors / Elison Matioli, Bin Lu, Daniel Piedra and Tomás Palacios
  • 7. Deep-level characterization: electrical and optical methods / Andrew M. armstrong and Robert J. Kaplar
  • 8. Modeling of GaN HEMTs: from device-level simulation to virtual prototyping / Gilberto Curatola and Giovanni Verzellesi
  • 9. Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities / Isabella Rossetto, Davide Bisi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini
  • 10. Cascode gallium nitride HEMTs on sillicon: structure, performance, manufacturing, and reliability / Primit Parikh
  • 11. Gate injection transistors: E-mode operation and conductivity modulation / Tetsuso Ueda
  • 12. Fluorine-implanted enhancement-mode transistors / Kevin J. Chen
  • 13. Drift effects in GaN high-voltage power transistors / Joachim Würfl
  • 14. Reliability aspects of 650V rated GaN power devices / Peter Moens, AuroreConstant and Abhishek Banerjee
  • 15. Switching characteristics of gallium nitride transistors: system-level issues / Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.

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