Silicon-germanium (SiGe) nanostructures production, properties and applications in electronics

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Bibliographic Details
Other Authors: Shiraki, Yasuhiro, 1942-, Usami, Noritaka.
Format: eBook
Language: English
Published: Cambridge, UK : Philadelphia, PA : Woodhead Pub., 2011.
Series: Woodhead Publishing in materials.
Subjects:
Nanostructured materials.
Silicon alloys.
Germanium alloys.
Electronic circuits.
Nanoelectronics.
elektronické knihy
electronic books
ISBN: 9781613443729
9780857091420
9781845696894
Physical Description: 1 online zdroj (xx, 627 p.) : ill.

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020 |a 9781613443729  |q (ebook) 
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020 |z 9781845696894 
035 |a (OCoLC)781711570  |z (OCoLC)827454883 
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245 0 0 |a Silicon-germanium (SiGe) nanostructures  |h [elektronický zdroj] :  |b production, properties and applications in electronics /  |c edited by Yasuhiro Shiraki and Noritaka Usami. 
260 |a Cambridge, UK :  |b Philadelphia, PA :  |b Woodhead Pub.,  |c 2011. 
300 |a 1 online zdroj (xx, 627 p.) :  |b ill. 
490 1 |a Woodhead Publishing in materials 
504 |a Includes bibliographical references and index. 
520 8 |a Annotation  |b Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.Silicon-germanium (SiGe) nanostructuresreviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapor deposition. This part also includes chapters covering strain engineering and modeling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices --  |c Source other than Library of Congress. 
590 |a Knovel Library  |b ACADEMIC - Electronics & Semiconductors 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity 
650 0 |a Nanostructured materials. 
650 0 |a Silicon alloys. 
650 0 |a Germanium alloys. 
650 0 |a Electronic circuits. 
650 0 |a Nanoelectronics. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Shiraki, Yasuhiro,  |d 1942- 
700 1 |a Usami, Noritaka. 
776 0 8 |i Print version:  |t Silicon-germanium (SiGe) nanostructures.  |d Cambridge, UK : Philadelphia, PA : Woodhead Pub., 2011  |z 9781845696894  |w (OCoLC)666239787 
830 0 |a Woodhead Publishing in materials. 
856 4 0 |u https://proxy.k.utb.cz/login?url=http://app.knovel.com/hotlink/toc/id:kpSGSGNPP2/silicongermanium_sige_nanostructures__production_properties_and_applications_in_electronics  |y Plný text 
992 |a BK  |c KNOVEL 
999 |c 79008  |d 79008 
993 |x NEPOSILAT  |y EIZ 

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