Nanoscale MOS transistors semi-classical transport and applications

"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods...

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Bibliographic Details
Main Author Esseni, D.
Other Authors Palestri, P., Selmi, L.
Format Electronic eBook
LanguageEnglish
Published Cambridge ; New York : Cambridge University Press, 2011.
Subjects
Metal oxide semiconductors > Design and construction.
Electron transport.
Nanoelectronics.
elektronické knihy
electronic books
Online AccessFull text
ISBN9780511930522
9780511933226
9780511923753
9780511973857
9780511928017
9780521516846
Physical Description1 online zdroj (xvii, 470 pages) : illustrations

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Table of Contents:
  • Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.

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