Nanoscale MOS transistors semi-classical transport and applications
"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods...
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| Main Author: | |
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| Other Authors: | , |
| Format: | eBook |
| Language: | English |
| Published: |
Cambridge ; New York :
Cambridge University Press,
2011.
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| Subjects: | |
| ISBN: | 9780511930522 9780511933226 9780511923753 9780511973857 9780511928017 9780521516846 |
| Physical Description: | 1 online zdroj (xvii, 470 pages) : illustrations |
Cover
Table of contents
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| 020 | |a 9780511930522 |q (ebook) | ||
| 020 | |a 9780511933226 |q (ebook) | ||
| 020 | |a 9780511923753 |q (ebook) | ||
| 020 | |a 9780511973857 |q (ebook) | ||
| 020 | |a 9780511928017 | ||
| 020 | |z 9780521516846 | ||
| 035 | |a (OCoLC)705071565 |z (OCoLC)746750269 | ||
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| 100 | 1 | |a Esseni, D. |q (David) | |
| 245 | 1 | 0 | |a Nanoscale MOS transistors |h [elektronický zdroj] : |b semi-classical transport and applications / |c David Esseni, Pierpaolo Palestri, and Luca Selmi. |
| 260 | |a Cambridge ; |a New York : |b Cambridge University Press, |c 2011. | ||
| 300 | |a 1 online zdroj (xvii, 470 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a počítač |b c |2 rdamedia | ||
| 338 | |a online zdroj |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a "Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"-- |c Provided by publisher. | ||
| 520 | |a "The traditional geometrical scaling of the CMOS technologies has recently evolved in a generalized scaling scenario where material innovations for different intrinsic regions of MOS transistors as well as new device architectures are considered as the main routes toward further performance improvements. In this regard, high-? dielectrics are used to reduce the gate leakage with respect to the SiO2 for a given drive capacitance, while the on-current of the MOS transistors is improved by using strained silicon and possibly with the introduction of alternative channel materials. Moreover, the ultra-thin body Silicon-On-Insulator (SOI) device architecture shows an excellent scalability even with a very lightly doped silicon film, while non-planar FinFETs are also of particular interest, because they are a viable way to obtain double-gate SOI MOSFETs and to realize in the same fabrication process n-MOS and p-MOS devices with different crystal orientations"-- |c Provided by publisher. | ||
| 505 | 8 | |a Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential. | |
| 590 | |a Knovel Library |b ACADEMIC - Electronics & Semiconductors | ||
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity | ||
| 650 | 0 | |a Metal oxide semiconductors |x Design and construction. | |
| 650 | 0 | |a Electron transport. | |
| 650 | 0 | |a Nanoelectronics. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 700 | 1 | |a Palestri, P. |q (Pierpaolo) | |
| 700 | 1 | |a Selmi, L. |q (Luca) | |
| 776 | 0 | 8 | |i Print version: |a Esseni, D. (David). |t Nanoscale MOS transistors. |d Cambridge ; New York : Cambridge University Press, 2011 |z 9780521516846 |w (DLC) 2010046886 |w (OCoLC)651920159 |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=http://app.knovel.com/hotlink/toc/id:kpNMOSTSC5/nanoscale_mos_transistors__semiclassical_transport_and_applications |y Plný text |
| 992 | |a BK |c KNOVEL | ||
| 999 | |c 78983 |d 78983 | ||
| 993 | |x NEPOSILAT |y EIZ | ||
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