Properties, Processing and Applications of Gallium Nitride and Related Semiconductors

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Bibliographic Details
Other Authors Edgar, J. (Editor), Strite, S. (Editor), Akasaki, I. (Editor), Amino, H. (Editor), Wetzel, C. (Editor)
Format eBook
LanguageEnglish
Published Stevenage : Herndon : Institution of Engineering & Technology Books International, Inc. [distributor] Jan. 1999
Subjects
elektronické knihy
electronic books
Online AccessFull text
ISBN9780852969533
Physical Description1 online zdroj.

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Table of Contents:
  • Machine generated contents note: Pt. A Physical, Electrical and Optical Properties
  • Structural, Mechanical and Thermal Properties of Group III Nitrides
  • Common crystal structures of the group III nitrides / M. Leszczynski
  • Lattice parameters of the group III nitrides / M. Leszczynski / T. Suski / J. Domagala / [et al.]
  • Mechanical properties of the group III nitrides / A. Polian
  • Thermal properties of the group III nitrides / S. Krukowski / M. Leszczynski / S. Porowski
  • AlN: Electrical, Electronic and Optical Properties
  • Bandedge and optical functions of AlN / A. Yoshida
  • Raman and IR studies of AlN / A. Yoshida
  • Photoluminescence/cathodoluminescence of clean samples of AlN / A. Yoshida
  • Electrical and transport properties of AlN / C.-M. Zetterling
  • GaN: Electrical, Electronic and Optical Properties
  • Bandedge and optical functions of GaN / M. Leroux / B. Gil
  • Raman and IR studies of GaN / C. Wetzel / I. Akasaki
  • -Luminescence of GaN / M. Leroux / B. Gil
  • Excitons in GaN / B. Gil / M. Leroux
  • Time-resolved photoluminescence studies of GaN / H. X. Jiang / J. Y. Lin
  • Persistent photoconductivity in GaN / H. X. Jiang / J. Y. Lin
  • Electrical transport in wurtzite and zincblende GaN / D. C. Look
  • Characterisation of III-V nitrides by capacitance transient spectroscopy / W. Gotz
  • Electron affinity of AlN, GaN and AlGaN alloys / R. J. Nemanich
  • Magnetic resonance studies of GaN-based materials and devices / W. E. Carlos
  • InN: Electrical, Electronic and Optical Properties
  • Bandedge and optical functions of InN / M. Leroux / B. Gil
  • Raman and IR studies of InN / C. Wetzel / I. Akasaki
  • Basic physical properties of InN / T. L. Tansley / E. M. Goldys
  • Electrical transport properties of InN / T. L. Tansley / E. M. Goldys
  • Electrical transport properties of GaInN and AlInN / T. L. Tansley / E. M. Goldys
  • AlGaN: Electrical, Electronic and Optical Properties
  • -Optical properties of AlGaN / H. Amano / I. Akasaki
  • Raman and IR reflectance studies of AlGaN / C. Wetzel / I. Akasaki
  • Electrical and transport properties of AlGaN / M. D. Bremser
  • Band Structure of Group III Nitrides
  • General remarks on the band structures of group III nitrides / M. Suzuki / T. Uenoyama
  • Electronic band structures of GaN and AlN / M. Suzuki / T. Uenoyama
  • Spin-orbit and crystal-field splitting energies of GaN and AlN / M. Suzuki / T. Uenoyama
  • Luttinger and Bir-Pikus parameters of GaN and AlN / M. Suzuki / T. Uenoyama
  • Electron and hole effective masses of GaN and AlN / M. Suzuki / T. Uenoyama
  • Deformation potentials of GaN and AlN / M. Suzuki / T. Uenoyama
  • Momentum matrix elements of GaN / M. Suzuki / T. Uenoyama
  • Subband structures of GaN/AlGaN quantum wells / M. Suzuki / T. Uenoyama
  • Optical gain of bulk GaN and GaN/AlGaN quantum wells / M. Suzuki / T. Uenoyama
  • Crystal Defects in GaN and Related Compounds
  • -General remarks on extended defects in GaN and related materials / L. T. Romano
  • Planar defects in GaN: basal plane faults, prismatic faults, stacking mismatch boundaries and inversion domain boundaries / J. E. Northrup / L. T. Romano
  • Defects in GaN and related materials: perfect dislocations, partial dislocation, dislocation movement and cracks / L. T. Romano
  • Defects in GaN and related materials: open core dislocations and V-defects / L. T. Romano / J. E. Northrup
  • Structural characterisation of bulk GaN platelet crystals / Z. Liliental-Weber
  • HRTEM characterisation of planar defects in GaN on sapphire / L. T. Romano
  • HRTEM characterisation of GaN films on GaAs / N. Kuwano
  • HRTEM characterisation of GaN and related compounds on SiC / A. D. Hanser / R. F. Davis
  • X-ray diffraction and reflectivity characterisation of GaN-based materials: general remarks / M. Leszczynski
  • -X-ray diffraction characterisation of GaN-based materials: rocking curve analysis / M. Leszczynski / J. Domagala / P. Prystawko
  • X-ray diffraction characterisation of GaN-based materials: triple axis diffractometry / H. Amano / I. Akasaki
  • Impurities and Native Defects in GaN and Related Compounds
  • Native defects, impurities and doping in GaN and related compounds: general remarks / C. G. Van de Walle / J. Neugebauer / C. Stampfl
  • Native point defects in GaN and related compounds / C. G. Van de Walle / J. Neugebauer / C. Stampfl
  • O, C and other unintentional impurities in GaN and related compounds / C. Wetzel / I. Akasaki
  • Shallow donors in GaN and related compounds / J. W. Orton / C. T. Foxon
  • Acceptors in GaN and related compounds / J. W. Orton / C. T. Foxon
  • Theory of codoping of acceptors and reactive donors in GaN / T. Yamamoto / H. Katayama-Yoshida
  • Yellow luminescence in GaN / C. G. Van de Walle / J. Neugebauer
  • -Hydrogen and acceptor compensation in GaN / C. G. Van de Walle / J. Neugebauer / N. M. Johnson
  • 3d transition metals in GaN and related compounds / K. Pressel / P. Thurian
  • Er-doped GaN and AlN / J. Torvik
  • Chemical and Compositional Analysis of GaN and Related Materials
  • Chemical and compositional analysis of GaN and related compounds: general remarks / T. S. Cheng
  • Measurement of alloy content in GaN and related materials / T. S. Cheng
  • Measurement of dopants and impurities in GaN and related materials / T. S. Cheng
  • Pt. B Materials Synthesis and Processing
  • Bulk Crystal Growth of GaN and Related Compounds
  • High pressure solution growth of GaN and related compounds / I. Grzegory / S. Porowski
  • Sublimation growth of GaN and AlN / K. Nishino / S. Sakai
  • RF growth of bulk GaN and AlN / J. Nause
  • Epitaxial Growth of GaN and Related Compounds
  • Sapphire substrates for growth of GaN and related compounds / Y. Takeda / M. Tabuchi
  • -SiC substrates for growth of GaN and related compounds / A. D. Hanser / R. F. Davis
  • Epitaxy of III-N layers on GaN substrates / M. Leszczynski / P. Prystawko / S. Porowski
  • Alternative oxide substrates for GaN heteroepitaxy / E. S. Hellman
  • Cubic substrates for growth of GaN and related compounds / H. Okumura
  • Halide VPE of GaN / A. Usui / K. Hiramatsu
  • MOVPE of GaN and related compounds / J. M. Redwing / T. F. Kuech
  • MBE of GaN and related compounds / M. Kamp / H. Riechert
  • Selective area growth and epitaxial lateral overgrowth of GaN / K. Hiramatsu / A. Usui
  • Lateral epitaxy and microstructure in selectively grown GaN on SiC substrates / O.-H. Nam / T. S. Zheleva / R. F. Davis
  • Ion Implantation of GaN and Related Compounds
  • General remarks on ion implantation of GaN and related compounds / S. Strite
  • Impurity redistribution of implanted and annealed GaN / J. C. Zolper
  • Electrical properties of ion implanted and annealed GaN / J. C. Zolper
  • -Optical properties of implanted GaN / S. Strite
  • Etching of GaN and Related Compounds
  • General remarks on III-V nitride etching / I. Adesida
  • Dry etching of GaN and related compounds / A. T. Ping / I. Adesida
  • Wet etching of GaN and related compounds / C. Youtsey / I. Adesida
  • Pt. C Specifications, Characterisation and Applications of GaN Based Devices
  • Material Interfaces with GaN and Related Compounds
  • Ohmic contacts to GaN and the III-V nitride semiconductor alloys / S. E. Mohney
  • Schottky barrier contacts to GaN / S. E. Mohney
  • Band offsets at interfaces between AlN, GaN and InN / S. W. King / R. J. Nemanich / R. F. Davis
  • Strained GaInN and Quantum Wells
  • GaInN quantum wells: composition pulling effect / Y. Kawaguchi / K. Hiramatsu
  • GaInN quantum wells: microstructure / F. Scholz / A. Hangleiter
  • GaInN quantum wells: optical properties / A. Hangleiter
  • GaInN quantum wells: effect of phase separation on lasing / A. Hangleiter
  • -GaInN quantum wells: piezoelectricity / I. Akasaki / T. Takeuchi
  • GaN-Based Light Emitting Diodes
  • UV, blue and green InGaN quantum well structure LEDs / S. Nakamura
  • Toyoda Gosei GaN LEDs / M. Koike
  • GaN LEDs grown on 6H-SiC / [et al.] / G. E. Bulman / K. Doverspike / H. S. Kong
  • Colour conversion of GaN LEDs / J. Schneider / P. Schlotter / J. Baur
  • Degradation mechanisms in GaN LEDs / T. Egawa / M. Umeno
  • GaN-Based Transistors
  • General remarks on GaN-based transistors and potential for high temperature/power operation / J. Burm
  • GaN FET structures: MESFET, MISFET, JFET and MODFET / J. Burm / L. F. Eastman
  • AlGaN/GaN HFETs/MODFETs / J. Burm / L. F. Eastman
  • GaN/SiC HBTs / J. Burm
  • GaN-Based Lasers and other Devices
  • InGaN/GaN/AlGaN-based laser diodes / S.
  • Nakamura
  • Optically pumped lasing and current injection lasing in GaN-based laser structures / J. J. Song / W. Shan
  • Gain coefficient and lasing threshold in GaN-based lasers / A. Hangleiter
  • -Theoretical and experimental results on GaN-based lasers / A. Kuramata / K. Domen
  • InGaN/GaN laser diodes grown on 6H-SiC / K. Doverspike / [et al.] / S. T. Sheppard / G. E. Bulman
  • Technologies for GaN surface emitting lasers / K. Iga / T. Honda
  • Role of defects in GaN-based lasers / J. Pankove
  • GaN-based UV detectors / G. M. Smith.

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