Properties, Processing and Applications of Gallium Nitride and Related Semiconductors

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Bibliographic Details
Other Authors Edgar, J. (Editor), Strite, S. (Editor), Akasaki, I. (Editor), Amino, H. (Editor), Wetzel, C. (Editor)
Format eBook
LanguageEnglish
Published Stevenage : Herndon : Institution of Engineering & Technology Books International, Inc. [distributor] Jan. 1999
Subjects
elektronické knihy
electronic books
Online AccessFull text
ISBN9780852969533
Physical Description1 online zdroj.

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LEADER 00000cam a2200000 4500
001 78980
003 CZ-ZlUTB
005 20251006170705.0
006 m o d
007 cr |n
008 020411e199901 xxka s 000 0 eng d
999 |c 78980  |d 78980 
020 |a 9780852969533 
035 |a (OCoLC)697785511 
040 |a BIP US  |b eng  |c S4S  |d OCLCQ  |d COO  |d UPM 
100 1 |a Edgar, J.,  |e Editor.  |4 edt 
245 1 0 |a Properties, Processing and Applications of Gallium Nitride and Related Semiconductors  |h [elektronický zdroj]. 
260 |a Stevenage :  |b Institution of Engineering & Technology  |c Jan. 1999  |a Herndon :  |b Books International, Inc. [distributor] 
300 |a 1 online zdroj. 
505 0 |a Machine generated contents note: Pt. A Physical, Electrical and Optical Properties -- Structural, Mechanical and Thermal Properties of Group III Nitrides -- Common crystal structures of the group III nitrides / M. Leszczynski -- Lattice parameters of the group III nitrides / M. Leszczynski / T. Suski / J. Domagala / [et al.] -- Mechanical properties of the group III nitrides / A. Polian -- Thermal properties of the group III nitrides / S. Krukowski / M. Leszczynski / S. Porowski -- AlN: Electrical, Electronic and Optical Properties -- Bandedge and optical functions of AlN / A. Yoshida -- Raman and IR studies of AlN / A. Yoshida -- Photoluminescence/cathodoluminescence of clean samples of AlN / A. Yoshida -- Electrical and transport properties of AlN / C.-M. Zetterling -- GaN: Electrical, Electronic and Optical Properties -- Bandedge and optical functions of GaN / M. Leroux / B. Gil -- Raman and IR studies of GaN / C. Wetzel / I. Akasaki ---Luminescence of GaN / M. Leroux / B. Gil -- Excitons in GaN / B. Gil / M. Leroux -- Time-resolved photoluminescence studies of GaN / H. X. Jiang / J. Y. Lin -- Persistent photoconductivity in GaN / H. X. Jiang / J. Y. Lin -- Electrical transport in wurtzite and zincblende GaN / D. C. Look -- Characterisation of III-V nitrides by capacitance transient spectroscopy / W. Gotz -- Electron affinity of AlN, GaN and AlGaN alloys / R. J. Nemanich -- Magnetic resonance studies of GaN-based materials and devices / W. E. Carlos -- InN: Electrical, Electronic and Optical Properties -- Bandedge and optical functions of InN / M. Leroux / B. Gil -- Raman and IR studies of InN / C. Wetzel / I. Akasaki -- Basic physical properties of InN / T. L. Tansley / E. M. Goldys -- Electrical transport properties of InN / T. L. Tansley / E. M. Goldys -- Electrical transport properties of GaInN and AlInN / T. L. Tansley / E. M. Goldys -- AlGaN: Electrical, Electronic and Optical Properties ---Optical properties of AlGaN / H. Amano / I. Akasaki -- Raman and IR reflectance studies of AlGaN / C. Wetzel / I. Akasaki -- Electrical and transport properties of AlGaN / M. D. Bremser -- Band Structure of Group III Nitrides -- General remarks on the band structures of group III nitrides / M. Suzuki / T. Uenoyama -- Electronic band structures of GaN and AlN / M. Suzuki / T. Uenoyama -- Spin-orbit and crystal-field splitting energies of GaN and AlN / M. Suzuki / T. Uenoyama -- Luttinger and Bir-Pikus parameters of GaN and AlN / M. Suzuki / T. Uenoyama -- Electron and hole effective masses of GaN and AlN / M. Suzuki / T. Uenoyama -- Deformation potentials of GaN and AlN / M. Suzuki / T. Uenoyama -- Momentum matrix elements of GaN / M. Suzuki / T. Uenoyama -- Subband structures of GaN/AlGaN quantum wells / M. Suzuki / T. Uenoyama -- Optical gain of bulk GaN and GaN/AlGaN quantum wells / M. Suzuki / T. Uenoyama -- Crystal Defects in GaN and Related Compounds ---General remarks on extended defects in GaN and related materials / L. T. Romano -- Planar defects in GaN: basal plane faults, prismatic faults, stacking mismatch boundaries and inversion domain boundaries / J. E. Northrup / L. T. Romano -- Defects in GaN and related materials: perfect dislocations, partial dislocation, dislocation movement and cracks / L. T. Romano -- Defects in GaN and related materials: open core dislocations and V-defects / L. T. Romano / J. E. Northrup -- Structural characterisation of bulk GaN platelet crystals / Z. Liliental-Weber -- HRTEM characterisation of planar defects in GaN on sapphire / L. T. Romano -- HRTEM characterisation of GaN films on GaAs / N. Kuwano -- HRTEM characterisation of GaN and related compounds on SiC / A. D. Hanser / R. F. Davis -- X-ray diffraction and reflectivity characterisation of GaN-based materials: general remarks / M. Leszczynski ---X-ray diffraction characterisation of GaN-based materials: rocking curve analysis / M. Leszczynski / J. Domagala / P. Prystawko -- X-ray diffraction characterisation of GaN-based materials: triple axis diffractometry / H. Amano / I. Akasaki -- Impurities and Native Defects in GaN and Related Compounds -- Native defects, impurities and doping in GaN and related compounds: general remarks / C. G. Van de Walle / J. Neugebauer / C. Stampfl -- Native point defects in GaN and related compounds / C. G. Van de Walle / J. Neugebauer / C. Stampfl -- O, C and other unintentional impurities in GaN and related compounds / C. Wetzel / I. Akasaki -- Shallow donors in GaN and related compounds / J. W. Orton / C. T. Foxon -- Acceptors in GaN and related compounds / J. W. Orton / C. T. Foxon -- Theory of codoping of acceptors and reactive donors in GaN / T. Yamamoto / H. Katayama-Yoshida -- Yellow luminescence in GaN / C. G. Van de Walle / J. Neugebauer ---Hydrogen and acceptor compensation in GaN / C. G. Van de Walle / J. Neugebauer / N. M. Johnson -- 3d transition metals in GaN and related compounds / K. Pressel / P. Thurian -- Er-doped GaN and AlN / J. Torvik -- Chemical and Compositional Analysis of GaN and Related Materials -- Chemical and compositional analysis of GaN and related compounds: general remarks / T. S. Cheng -- Measurement of alloy content in GaN and related materials / T. S. Cheng -- Measurement of dopants and impurities in GaN and related materials / T. S. Cheng -- Pt. B Materials Synthesis and Processing -- Bulk Crystal Growth of GaN and Related Compounds -- High pressure solution growth of GaN and related compounds / I. Grzegory / S. Porowski -- Sublimation growth of GaN and AlN / K. Nishino / S. Sakai -- RF growth of bulk GaN and AlN / J. Nause -- Epitaxial Growth of GaN and Related Compounds -- Sapphire substrates for growth of GaN and related compounds / Y. Takeda / M. Tabuchi ---SiC substrates for growth of GaN and related compounds / A. D. Hanser / R. F. Davis -- Epitaxy of III-N layers on GaN substrates / M. Leszczynski / P. Prystawko / S. Porowski -- Alternative oxide substrates for GaN heteroepitaxy / E. S. Hellman -- Cubic substrates for growth of GaN and related compounds / H. Okumura -- Halide VPE of GaN / A. Usui / K. Hiramatsu -- MOVPE of GaN and related compounds / J. M. Redwing / T. F. Kuech -- MBE of GaN and related compounds / M. Kamp / H. Riechert -- Selective area growth and epitaxial lateral overgrowth of GaN / K. Hiramatsu / A. Usui -- Lateral epitaxy and microstructure in selectively grown GaN on SiC substrates / O.-H. Nam / T. S. Zheleva / R. F. Davis -- Ion Implantation of GaN and Related Compounds -- General remarks on ion implantation of GaN and related compounds / S. Strite -- Impurity redistribution of implanted and annealed GaN / J. C. Zolper -- Electrical properties of ion implanted and annealed GaN / J. C. Zolper ---Optical properties of implanted GaN / S. Strite -- Etching of GaN and Related Compounds -- General remarks on III-V nitride etching / I. Adesida -- Dry etching of GaN and related compounds / A. T. Ping / I. Adesida -- Wet etching of GaN and related compounds / C. Youtsey / I. Adesida -- Pt. C Specifications, Characterisation and Applications of GaN Based Devices -- Material Interfaces with GaN and Related Compounds -- Ohmic contacts to GaN and the III-V nitride semiconductor alloys / S. E. Mohney -- Schottky barrier contacts to GaN / S. E. Mohney -- Band offsets at interfaces between AlN, GaN and InN / S. W. King / R. J. Nemanich / R. F. Davis -- Strained GaInN and Quantum Wells -- GaInN quantum wells: composition pulling effect / Y. Kawaguchi / K. Hiramatsu -- GaInN quantum wells: microstructure / F. Scholz / A. Hangleiter -- GaInN quantum wells: optical properties / A. Hangleiter -- GaInN quantum wells: effect of phase separation on lasing / A. Hangleiter ---GaInN quantum wells: piezoelectricity / I. Akasaki / T. Takeuchi -- GaN-Based Light Emitting Diodes -- UV, blue and green InGaN quantum well structure LEDs / S. Nakamura -- Toyoda Gosei GaN LEDs / M. Koike -- GaN LEDs grown on 6H-SiC / [et al.] / G. E. Bulman / K. Doverspike / H. S. Kong -- Colour conversion of GaN LEDs / J. Schneider / P. Schlotter / J. Baur -- Degradation mechanisms in GaN LEDs / T. Egawa / M. Umeno -- GaN-Based Transistors -- General remarks on GaN-based transistors and potential for high temperature/power operation / J. Burm -- GaN FET structures: MESFET, MISFET, JFET and MODFET / J. Burm / L. F. Eastman -- AlGaN/GaN HFETs/MODFETs / J. Burm / L. F. Eastman -- GaN/SiC HBTs / J. Burm -- GaN-Based Lasers and other Devices -- InGaN/GaN/AlGaN-based laser diodes / S. 
505 0 |a Nakamura -- Optically pumped lasing and current injection lasing in GaN-based laser structures / J. J. Song / W. Shan -- Gain coefficient and lasing threshold in GaN-based lasers / A. Hangleiter ---Theoretical and experimental results on GaN-based lasers / A. Kuramata / K. Domen -- InGaN/GaN laser diodes grown on 6H-SiC / K. Doverspike / [et al.] / S. T. Sheppard / G. E. Bulman -- Technologies for GaN surface emitting lasers / K. Iga / T. Honda -- Role of defects in GaN-based lasers / J. Pankove -- GaN-based UV detectors / G. M. Smith. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity 
520 8 |a Annotation  |b Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices. 
521 |a Scholarly & Professional  |b Institution of Engineering & Technology. 
590 |a Knovel Library  |b ACADEMIC - Electronics & Semiconductors 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Strite, S.,  |e Editor.  |4 edt 
700 1 |a Akasaki, I.,  |e Editor.  |4 edt 
700 1 |a Amino, H.,  |e Editor.  |4 edt 
700 1 |a Wetzel, C.,  |e Editor.  |4 edt 
856 4 0 |u https://proxy.k.utb.cz/login?url=http://app.knovel.com/hotlink/toc/id:kpPPAGNRSL/properties_processing_and_applications_of_gallium_nitride_and_related_semiconductors 
942 |2 udc 
992 |a BK  |c KNOVEL 
993 |x NEPOSILAT  |y EIZ 

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