Magnetic memory fundamentals and technology

"If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related...

Full description

Saved in:
Bibliographic Details
Main Author: Tang, Denny D.
Other Authors: Lee, Yuan-Jen.
Format: eBook
Language: English
Published: New York : Cambridge University Press, 2010.
Subjects:
ISBN: 9780511684777
9780521449649
9780511677052
9780511681547
Physical Description: 1 online zdroj (x, 196 p.) : ill.

Cover

Table of contents

Description
Summary: "If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research"--Provided by publisher.
Bibliography: Includes bibliographical references and index.
ISBN: 9780511684777
9780521449649
9780511677052
9780511681547
Access: Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity