Molecular beam epitaxy applications to key materials

In this volume, the Editor and Contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emp...

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Bibliographic Details
Other Authors Farrow, R. F. C.
Format Electronic eBook
LanguageEnglish
Published Park Ridge, N.J. : Noyes Publications, ©1995.
SeriesMaterials science and process technology series. Electronic materials and process technology.
Subjects
Online AccessFull text
ISBN9781591240952
9780815518402
9780815518389
9780080946115
9780815513711
Physical Description1 online zdroj (xx, 772 pages) : illustrations.

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Table of Contents:
  • The Technology and Design of Molecular Beam Epitaxy Systems
  • Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs
  • Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties
  • Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures
  • Elemental Semiconductor Heterostructures Growth, Properties, and Applications
  • MBE Growth of High Tc Superconductors
  • MBE Growth of Artificially-Layered Magnetic Metal Structures
  • Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy
  • Acknowledgments
  • Appendix: Two-Level Diffraction
  • References
  • Index.