Molecular beam epitaxy applications to key materials

In this volume, the Editor and Contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emp...

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Bibliographic Details
Other Authors: Farrow, R. F. C.
Format: eBook
Language: English
Published: Park Ridge, N.J. : Noyes Publications, ©1995.
Series: Materials science and process technology series. Electronic materials and process technology.
Subjects:
Molecular beam epitaxy.
elektronické knihy
electronic books
ISBN: 9781591240952
9780815518402
9780815518389
9780080946115
9780815513711
Physical Description: 1 online zdroj (xx, 772 pages) : illustrations.

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Table of contents

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020 |a 9781591240952  |q (ebook) 
020 |a 9780815518402 
020 |a 9780815518389  |q (ebook) 
020 |a 9780080946115  |q (ebook) 
020 |z 9780815513711 
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245 0 0 |a Molecular beam epitaxy  |h [elektronický zdroj] :  |b applications to key materials /  |c edited by Robin F.C. Farrow. 
260 |a Park Ridge, N.J. :  |b Noyes Publications,  |c ©1995. 
300 |a 1 online zdroj (xx, 772 pages) :  |b illustrations. 
336 |a text  |b txt  |2 rdacontent 
337 |a počítač  |b c  |2 rdamedia 
338 |a online zdroj  |b cr  |2 rdacarrier 
490 1 |a Materials science and process technology series. Electronic materials and process technology 
504 |a Includes bibliographical references and index. 
505 0 |a The Technology and Design of Molecular Beam Epitaxy Systems -- Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs -- Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties -- Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures -- Elemental Semiconductor Heterostructures Growth, Properties, and Applications -- MBE Growth of High Tc Superconductors -- MBE Growth of Artificially-Layered Magnetic Metal Structures -- Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy -- Acknowledgments -- Appendix: Two-Level Diffraction -- References -- Index. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity 
520 |a In this volume, the Editor and Contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices. 
590 |a Knovel Library  |b ACADEMIC - Electronics & Semiconductors 
650 0 |a Molecular beam epitaxy. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Farrow, R. F. C. 
776 0 8 |i Print version:  |t Molecular beam epitaxy.  |d Park Ridge, N.J. : Noyes Publications, ©1995  |z 0815513712  |w (DLC) 94031247  |w (OCoLC)31078964 
830 0 |a Materials science and process technology series.  |p Electronic materials and process technology. 
856 4 0 |u https://proxy.k.utb.cz/login?url=http://app.knovel.com/hotlink/toc/id:kpMBEAKM01/molecular_beam_epitaxy__applications_to_key_materials  |y Plný text 
942 |2 udc 
992 |a BK  |c KNOVEL 
993 |x NEPOSILAT  |y EIZ 

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