Nonlinear transistor model parameter extraction techniques

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Bibliographic Details
Other Authors Rudolph, Matthias, 1969-, Fager, Christian, Root, David E.
Format eBook
LanguageEnglish
Published Cambridge, UK ; New York : Cambridge University Press, 2012.
SeriesCambridge RF and microwave engineering series.
Subjects
Transistors > Mathematical models.
Electronic circuit design.
elektronické knihy
electronic books
Online AccessFull text
ISBN9781139161268
9781139014960
9781139157445
9781139154659
Physical Description1 online zdroj (xiv, 352 p.) : ill.

Cover

Table of Contents:
  • Machine generated contents note: 1.Introduction / Matthias Rudolph
  • 1.1.Model extraction challenges
  • 1.2.Model extraction workflow
  • References
  • 2.DC and thermal modeling: III-V FETs and HBTs / David E. Root
  • 2.1.Introduction
  • 2.2.Basic DC characteristics
  • 2.3.FET DC parameters and modeling
  • 2.4.HBT DC parameters and modeling
  • 2.5.Process control monitoring
  • 2.6.Thermal modeling overview
  • 2.7.Physics-based thermal scaling model for HBTs
  • 2.8.Measurement-based thermal model for FETs
  • 2.9.Transistor reliability evaluation
  • Acknowledgments
  • References
  • 3.Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling / Joseph M. Gering
  • 3.1.Introduction
  • 3.2.Test structures with calibration and de-embedding
  • 3.3.Methods for extrinsic parameter extraction used in HBTs
  • 3.4.Methods for extrinsic parameter extraction used in HEMTs
  • 3.5.Scaling for multicell arrays
  • References
  • -4.Uncertainties in small-signal equivalent circuit modeling / Matthias Ferndahl
  • 4.1.Introduction
  • 4.2.Uncertainties in direct extraction methods
  • 4.3.Optimizer-based estimation techniques
  • 4.4.Complexity versus uncertainty in equivalent circuit modeling
  • 4.5.Summary and discussion
  • References
  • 5.The large-signal model: theoretical foundations, practical considerations, and recent trends / Masaya Iwamoto
  • 5.1.Introduction
  • 5.2.The equivalent circuit
  • 5.3.Nonlinear model constitutive relations
  • 5.4.Table-based models
  • 5.5.Models based on artificial neural networks (ANNs)
  • 5.6.Extrapolation of measurement-based models
  • 5.7.Charge modeling
  • 5.8.Terminal charge conservation, delay, and transit time for HBT models
  • 5.9.FET modeling in terms of a drift charge concept
  • 5.10.Parameter extraction of compact models from large-signal data
  • 5.11.Conclusions
  • References
  • 6.Large and packaged transistors / Matthias Rudolph
  • 6.1.Introduction
  • -6.2.Thermal modeling
  • 6.3.EM simulation
  • 6.4.Equivalent-circuit package model
  • References
  • 7.Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors / Raymond Quere
  • 7.1.Introduction
  • 7.2.Nonlinear electrothermal modeling
  • 7.3.Trapping effects
  • 7.4.Characterization tools
  • 7.5.Conclusions
  • Acknowledgment
  • References
  • 8.Optimizing microwave measurements for model construction and validation / Giovanni Crupi
  • 8.1.Introduction
  • 8.2.Microwave measurements and de-embedding
  • 8.3.Measurements for linear model construction
  • 8.4.Measurements for model validation
  • 8.5.Measurements for nonlinear model construction
  • References
  • 9.Practical statistical simulation for efficient circuit design / Hongxiao Shao
  • 9.1.Introduction
  • 9.2.Approach, model development, design flow
  • 9.3.Examples of application to real circuits
  • 9.4.Summary
  • Acknowledgments
  • References
  • 10.Noise modeling / Manfred Berroth
  • -10.1.Fundamentals
  • 10.2.Noise sources
  • 10.3.Noise analysis in linear network theory
  • 10.4.Noise measurement setups
  • 10.5.Transistor noise parameter extraction
  • 10.6.Summary
  • References.

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