Nonlinear transistor model parameter extraction techniques

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Bibliographic Details
Other Authors: Rudolph, Matthias, 1969-, Fager, Christian., Root, David E.
Format: eBook
Language: English
Published: Cambridge, UK ; New York : Cambridge University Press, 2012.
Series: Cambridge RF and microwave engineering series.
Subjects:
Transistors > Mathematical models.
Electronic circuit design.
elektronické knihy
electronic books
ISBN: 9781139161268
9781139014960
9781139157445
9781139154659
Physical Description: 1 online zdroj (xiv, 352 p.) : ill.

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Table of contents

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245 0 0 |a Nonlinear transistor model parameter extraction techniques  |h [elektronický zdroj] /  |c edited by Matthias Rudolph, Christian Fager, David E. Root. 
260 |a Cambridge, UK ;  |a New York :  |b Cambridge University Press,  |c 2012. 
300 |a 1 online zdroj (xiv, 352 p.) :  |b ill. 
490 1 |a The Cambridge RF and microwave engineering series 
504 |a Includes bibliographical references and index. 
588 |a Description based on print version record. 
505 0 |a Machine generated contents note: 1.Introduction / Matthias Rudolph -- 1.1.Model extraction challenges -- 1.2.Model extraction workflow -- References -- 2.DC and thermal modeling: III-V FETs and HBTs / David E. Root -- 2.1.Introduction -- 2.2.Basic DC characteristics -- 2.3.FET DC parameters and modeling -- 2.4.HBT DC parameters and modeling -- 2.5.Process control monitoring -- 2.6.Thermal modeling overview -- 2.7.Physics-based thermal scaling model for HBTs -- 2.8.Measurement-based thermal model for FETs -- 2.9.Transistor reliability evaluation -- Acknowledgments -- References -- 3.Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling / Joseph M. Gering -- 3.1.Introduction -- 3.2.Test structures with calibration and de-embedding -- 3.3.Methods for extrinsic parameter extraction used in HBTs -- 3.4.Methods for extrinsic parameter extraction used in HEMTs -- 3.5.Scaling for multicell arrays -- References ---4.Uncertainties in small-signal equivalent circuit modeling / Matthias Ferndahl -- 4.1.Introduction -- 4.2.Uncertainties in direct extraction methods -- 4.3.Optimizer-based estimation techniques -- 4.4.Complexity versus uncertainty in equivalent circuit modeling -- 4.5.Summary and discussion -- References -- 5.The large-signal model: theoretical foundations, practical considerations, and recent trends / Masaya Iwamoto -- 5.1.Introduction -- 5.2.The equivalent circuit -- 5.3.Nonlinear model constitutive relations -- 5.4.Table-based models -- 5.5.Models based on artificial neural networks (ANNs) -- 5.6.Extrapolation of measurement-based models -- 5.7.Charge modeling -- 5.8.Terminal charge conservation, delay, and transit time for HBT models -- 5.9.FET modeling in terms of a drift charge concept -- 5.10.Parameter extraction of compact models from large-signal data -- 5.11.Conclusions -- References -- 6.Large and packaged transistors / Matthias Rudolph -- 6.1.Introduction ---6.2.Thermal modeling -- 6.3.EM simulation -- 6.4.Equivalent-circuit package model -- References -- 7.Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors / Raymond Quere -- 7.1.Introduction -- 7.2.Nonlinear electrothermal modeling -- 7.3.Trapping effects -- 7.4.Characterization tools -- 7.5.Conclusions -- Acknowledgment -- References -- 8.Optimizing microwave measurements for model construction and validation / Giovanni Crupi -- 8.1.Introduction -- 8.2.Microwave measurements and de-embedding -- 8.3.Measurements for linear model construction -- 8.4.Measurements for model validation -- 8.5.Measurements for nonlinear model construction -- References -- 9.Practical statistical simulation for efficient circuit design / Hongxiao Shao -- 9.1.Introduction -- 9.2.Approach, model development, design flow -- 9.3.Examples of application to real circuits -- 9.4.Summary -- Acknowledgments -- References -- 10.Noise modeling / Manfred Berroth ---10.1.Fundamentals -- 10.2.Noise sources -- 10.3.Noise analysis in linear network theory -- 10.4.Noise measurement setups -- 10.5.Transistor noise parameter extraction -- 10.6.Summary -- References. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity 
650 0 |a Transistors  |x Mathematical models. 
650 0 |a Electronic circuit design. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Rudolph, Matthias,  |d 1969- 
700 1 |a Fager, Christian. 
700 1 |a Root, David E. 
776 0 8 |i Print version:  |t Nonlinear transistor model parameter extraction techniques.  |d Cambridge, UK ; New York : Cambridge University Press, 2012  |z 9780521762106  |w (DLC) 2011027239  |w (OCoLC)721888726 
830 0 |a Cambridge RF and microwave engineering series. 
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