Reliability and radiation effects in compound semiconductors
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first...
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| Main Author | |
|---|---|
| Format | eBook |
| Language | English |
| Published |
Singapore ; Hackensack, NJ :
World Scientific,
c2010.
|
| Subjects | |
| Online Access | Full text |
| ISBN | 9781615836871 |
| Physical Description | 1 online zdroj (xii, 363 p.) : ill. |
Cover
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | 73824 | ||
| 003 | CZ-ZlUTB | ||
| 005 | 20251006170558.0 | ||
| 006 | m d | ||
| 007 | cr un | ||
| 008 | 110214s2010 si a sb 001 0 eng d | ||
| 020 | |a 9781615836871 |q (ebook) | ||
| 035 | |a (OCoLC)701731809 |z (OCoLC)738434092 | ||
| 040 | |a KNOVL |b eng |c KNOVL |d OCLCQ |d DEBSZ |d STF |d GA0 |d E7B |d OCLCQ |d N$T |d EBLCP |d COO |d UIU |d YDXCP |d OCLCQ |d KNOVL |d ZCU |d KNOVL | ||
| 100 | 1 | |a Johnston, Allan |q (Allan H.) | |
| 245 | 1 | 0 | |a Reliability and radiation effects in compound semiconductors |h [elektronický zdroj] / |c Allan Johnston. |
| 260 | |a Singapore ; |a Hackensack, NJ : |b World Scientific, |c c2010. | ||
| 300 | |a 1 online zdroj (xii, 363 p.) : |b ill. | ||
| 504 | |a Includes bibliographical references (p. 356) and index. | ||
| 505 | 0 | |a Semiconductor fundamentals -- Transistor technologies -- Optoelectronics -- Reliability fundamentals -- Compound semiconductor reliability -- Optoelectronic device reliability -- Radiation environments -- Interactions of radiation with semiconductors -- Displacement damage in compound semiconductors -- Displacement damage in optoelectronic devices -- Radiation damage in optocouplers -- Effects from single particles. | |
| 520 | |a This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates. | ||
| 588 | |a Description based on print version record. | ||
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity | ||
| 650 | 0 | |a Compound semiconductors |x Reliability. | |
| 650 | 0 | |a Compound semiconductors |x Effect of radiation on. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 776 | 0 | 8 | |i Print version: |a Johnston, Allan (Allan H.). |t Reliability and radiation effects in compound semiconductors. |d Singapore ; Hackensack, NJ : World Scientific, c2010 |z 9789814277105 |w (OCoLC)311763222 |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=http://app.knovel.com/web/toc.v/cid:kpRRECS002 |
| 992 | |a BK |c KNOVEL | ||
| 999 | |c 73824 |d 73824 | ||
| 993 | |x NEPOSILAT |y EIZ | ||