Nanoelectronics : physics, technology and applications

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Bibliographic Details
Main Authors Parekh, Rutu (Author), Dhavse, Rasika (Author)
Format Electronic eBook
LanguageEnglish
Published Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2023]
SeriesIOP ebooks. 2023 collection.
Subjects
Online AccessFull text
ISBN9780750348119
9780750348102
9780750348096
9780750348126
Physical Description1 online zdroj : ilustrace.

Cover

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245 1 |a Nanoelectronics :  |b physics, technology and applications /  |c Rutu Parekh, Rasika Dhavse. 
264 1 |a Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :  |b IOP Publishing,  |c [2023] 
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490 1 |a IOP ebooks. [2023 collection] 
500 |a "Version: 20231101"--Title page verso. 
504 |a Obsahuje bibliografické odkazy. 
505 |a 1. Physical and technological limitations of nano-CMOS devices to the end of the roadmap and beyond -- 1.1. MOSFETs and their scaling -- 1.2. Limitations and showstoppers arising from CMOS scaling, and technological options for MOSFET optimisation 
505 8 |a 2. Introduction and overview of nanoelectronics -- 2.1. Introduction -- 2.2. Market requirements for nanoelectronics -- 2.3. Nanofabrication 
505 8 |a 3. Introduction to the quantum theory of solids -- 3.1. Classical particles, classical waves and quantum particles -- 3.2. Quantum particles and principles of quantum mechanics -- 3.3. Quantum tunnelling -- 3.4. Quantum confinement -- 3.5. Schrodinger's wave equation--meaning, boundary conditions and applications -- 3.6. Significance of the band theory of solids -- 3.7. Factors affecting the energy band gap -- 3.8. Fermi statistics and electrical conduction in solids 
505 8 |a 4. Emerging research devices for nanocircuits -- 4.1. Channel-replacement devices -- 4.2. Graphene -- 4.3. Fullerenes and carbon nanotubes -- 4.4. Tunnel field-effect transistor -- 4.5. Nanowire field-effect transistors -- 4.6. P-type III-V channel-replacement devices -- 4.7. N-type Ge channel-replacement devices -- 4.8. Potential evaluation--extending MOSFETs to the end of the roadmap -- 4.9. Quantum confinement and associated devices -- 4.10. Quantum-mechanical tunnelling and Coulomb blockade in a single-electron transistor -- 4.11. Structure and working principle of single-electron transistors -- 4.12. Other quantum structures and their applications -- 4.13. Nanoelectromechanical systems -- 4.14. Atomic switches -- 4.15. Mott FETs -- 4.16. Negative-capacitance FETs -- 4.17. Alternative information-processing devices 
505 8 |a 5. Emerging memory devices -- 5.1. Memristors -- 5.2. Magnetoresistive effect for memory applications -- 5.3. Magnetoresistive RAM -- 5.4. Spin-transfer torque magnetic random access memory -- 5.5. All-spin logic -- 5.6. Phase-change memory -- 5.7. Resistive random access memory -- 5.8. Ferroelectric RAM -- 5.9. Mott memory -- 5.10. Carbon-based emerging memory devices -- 5.11. Molecular memory -- 5.12. Macromolecular memory -- 5.13. Racetrack memory -- 5.14. Comparison of memory types 
505 8 |a 6. Modelling and simulation -- 6.1. Technology modelling and simulation -- 6.2. Circuit simulators -- 6.3. Monte Carlo simulation -- 6.4. Microelectromechanical/nanoelectromechanical device simulators -- 6.5. System-level design 
505 8 |a 7. Nanofabrication -- 7.1. Microfabrication techniques -- 7.2. Limits of photolithography and advanced lithographic processes -- 7.3. Self-assembly processes -- 7.4. Nano measurement and characterisation tools -- 7.5. Thin-film technology and synthesis -- 7.6. Microelectromechanical, microoptoelectromechanical systems and nanoelectromechanical technologies -- 7.7. Process integration 
505 8 |a 8. Emerging nanoelectronic architectures -- 8.1. Storage class memory -- 8.2. Morphic computing : the architectures that can learn 
505 8 |a 9. Nanosensors and transducers -- 9.1. Introduction to sensors science and technology -- 9.2. Nanosensors and transducers in food industry, healthcare and defence -- 9.3. Metal nanoparticles and quantum-dots-based sensors -- 9.4. Carbon-nanotubes-based sensors -- 9.5. Electronic skin based on nanotechnology -- 9.6. Microelectromechanical/nanoelectromechanical sensors. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 3 |a This course text provides comprehensive coverage for fundamental and advanced courses in nanoelectronics. It provides insight into the future of electronics, emerging devices, logic and memory, sensors, systems architecture, nanofabrication, and the fundamental physics behind nanoelectronics. After reading the book, students will be able to understand the applications and design principles of nanodevices and nanosensors. The content is organised into nine chapters, each covering a specific area and written in accessible language. The topics covered include physical and technological limitations of nano CMOS devices, quantum physics, simulation and modelling, nanofabrication, emerging logic and memory devices and application areas including nanoarchitectures, sensors, and transducers. The book is a core text for senior undergraduate and postgraduate courses in nanoelectronics, and a valuable reference for researchers, engineers and specialists in fields including electronic devices, solid-state physics and nanotechnology. 
588 |a Title from PDF title page (viewed on January 4, 2024). 
650 |a Nanoelectronics. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Dhavse, Rasika,  |e author. 
710 2 |a Institute of Physics (Great Britain),  |e publisher. 
776 8 |i Print version:  |z 9780750348096  |z 9780750348126 
830 |a IOP ebooks.  |p 2023 collection. 
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