Charge-Trapping Non-Volatile Memories : Volume 2--Emerging Materials and Structures
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, us...
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| Corporate Author | |
|---|---|
| Other Authors | |
| Format | Electronic eBook |
| Language | English |
| Published |
Cham :
Springer International Publishing : Imprint: Springer,
2017.
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| Subjects | |
| Online Access | Full text |
| ISBN | 9783319487052 |
| DOI | 10.1007/978-3-319-48705-2 |
| Physical Description | 1 online resource (V, 211 p. 170 illus., 117 illus. in color.) |
Cover
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| 024 | 7 | |a 10.1007/978-3-319-48705-2 |2 doi | |
| 245 | 1 | 0 | |a Charge-Trapping Non-Volatile Memories : |b Volume 2--Emerging Materials and Structures / |c edited by Panagiotis Dimitrakis. |
| 264 | 1 | |a Cham : |b Springer International Publishing : |b Imprint: Springer, |c 2017. | |
| 300 | |a 1 online resource (V, 211 p. 170 illus., 117 illus. in color.) | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 505 | 0 | |a Materials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer. | |
| 506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
| 520 | |a This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks. | ||
| 650 | 0 | |a Materials science. | |
| 650 | 0 | |a Computer memory systems. | |
| 650 | 0 | |a Electronic circuits. | |
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Microelectronics. | |
| 650 | 0 | |a Engineering |x Materials. | |
| 650 | 0 | |a Nanotechnology. | |
| 655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
| 655 | 9 | |a electronic books |2 eczenas | |
| 700 | 1 | |a Dimitrakis, Panagiotis. |e editor. | |
| 710 | 2 | |a SpringerLink (Online service) | |
| 776 | 0 | 8 | |i Printed edition: |z 9783319487038 |
| 856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=http://dx.doi.org/10.1007/978-3-319-48705-2 |
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